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Volumn 98, Issue 19, 2011, Pages

Conversion of strain state from biaxial to uniaxial in strained silicon

Author keywords

[No Author keywords available]

Indexed keywords

AZIMUTHAL ANGLE; PATTERNED STRUCTURE; POISSON'S EFFECTS; RAMAN SHIFT; SHAPE DEPENDENCE; STRAIN STATE; STRAINED SILICON;

EID: 79959640734     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3589981     Document Type: Article
Times cited : (12)

References (15)
  • 1
    • 0342853202 scopus 로고    scopus 로고
    • 0268-1242, 10.1088/0268-1242/12/12/001
    • F. Schäffler, Semicond. Sci. Technol. 0268-1242 12, 1515 (1997). 10.1088/0268-1242/12/12/001
    • (1997) Semicond. Sci. Technol. , vol.12 , pp. 1515
    • Schäffler, F.1
  • 2
    • 10844253101 scopus 로고    scopus 로고
    • Silicon device scaling to the sub-10-nm regime
    • DOI 10.1126/science.1100731
    • L. Meikei, B. Doris, J. Kedzierski, R. Ken, and Y. Min, Science 0036-8075 306, 2057 (2004). 10.1126/science.1100731 (Pubitemid 40007650)
    • (2004) Science , vol.306 , Issue.5704 , pp. 2057-2060
    • Ieong, M.1    Doris, B.2    Kedzierski, J.3    Rim, K.4    Yang, M.5
  • 3
    • 0033076887 scopus 로고    scopus 로고
    • 0935-9648, 10.1002/(SICI)1521-4095(199903)11:3<191::AID-ADMA191>3. 0.CO;2-3
    • D. J. Paul, Adv. Mater. (Weinheim, Ger.) 0935-9648 11, 191 (1999). 10.1002/(SICI)1521-4095(199903)11:3<191::AID-ADMA191>3.0.CO;2-3
    • (1999) Adv. Mater. (Weinheim, Ger.) , vol.11 , pp. 191
    • Paul, D.J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.