The complex evolution of strain during nanoscale patterning of 60 nm thick strained silicon layer directly on insulator

Applied Physics Letters

Volumn 94, Issue 24, 2009, Pages

  Moutanabbir, O ^a   Reiche, M ^a   Erfurth, W ^a   Naumann, F ^b   Petzold, M ^b   Gosele U ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b FRAUNHOFER INSTITUTE FOR MECHANICS OF MATERIALS IWM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC RELAXATION; BIAXIAL STRAINS; BIAXIAL TENSILE; COMPLEX EVOLUTIONS; FREE SURFACES; IN-PLANE STRAINS; MICRO-RAMAN; NANO SCALE; NANOSCALE PATTERNING; STRAIN BEHAVIORS; STRAINED SILICON; STRAINED-SI; THREE DIMENSIONAL FINITE ELEMENTS;

CRYSTALLOGRAPHY; LITHOGRAPHY; MOSFET DEVICES; NANOSTRUCTURED MATERIALS;

NANOSTRUCTURES;

EID: 67649199311     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3157134     Document Type: Article

References (20)

1. M. L. Lee, E. A. Fitzgerald, M. T. Bulsara, M. T. Currie, and A. Lochtefeld, J. Appl. Phys. 0021-8979 97, 011101 (2005). 10.1063/1.1819976
2. S. E. Thompson, S. Suthram, Y. Sun, G. Sun, S. Parthasarathy, M. Chu, T. Nishida, Tech. Dig.-Int. Electron Devices Meet. 2006, 1.
3. K. Kim, C. -T. Chuang, K. Rim, and R. Joshi, Solid-State Electron. 0038-1101 48, 239 (2004). 10.1016/S0038-1101(03)00296-X
4. S. J. Koester, K. Rim, J. O. Chu, P. M. Mooney, J. A. Ott, and M. A. Hargrove, Appl. Phys. Lett. 0003-6951 79, 2148 (2001). 10.1063/1.1405151
5. R. Z. Lei, W. Tsai, I. Aberg, T. B. O'Reilly, J. L. Hoyt, D. A. Antoniadis, H. I. Smith, A. J. Paul, M. L. Green, J. Li, and R. Hull, Appl. Phys. Lett. 0003-6951 87, 251926 (2005). 10.1063/1.2149153
6. C. Himcinschi, R. Singh, I. Radu, A. P. Milenin, W. Erfurth, M. Reiche, U. Gösele, S. H. Christiansen, F. Muster, and M. Petzold, Appl. Phys. Lett. 0003-6951 90, 021902 (2007). 10.1063/1.2431476
7. M. Reiche, O. Moutanabbir, C. Himcinschi, S. Christiansen, W. Erfurth, U. Gösele, S. Mantl, D. Buca, Q. T. Zhao, R. Loo, D. Nguyen, F. Muster, and M. Petzold, ECS Trans. 1938-5862 16, 311 (2008). 10.1149/1.2982883
8. H. S. P. Wong, IBM J. Res. Dev. 0018-8646 46, 133 (2002).
9. S. C. Jain, B. Dietrich, H. Richter, A. Atkinson, and A. H. Harker, Phys. Rev. B 0163-1829 52, 6247 (1995). 10.1103/PhysRevB.52.6247
10. W. A. Brantley, J. Appl. Phys. 0021-8979 44, 534 (1973). 10.1063/1.1661935
11. S. M. Hu, J. Appl. Phys. 0021-8979 50, 4661 (1979). 10.1063/1.326575
12. S. Sakai, K. Kawasaki, and N. Wada, Jpn. J. Appl. Phys., Part 2 0021-4922 29, L853 (1990). 10.1143/JJAP.29.L853
13. P. Van Mieghem, S. C. Jain, J. Nijs, and R. Van Overstraeten, J. Appl. Phys. 0021-8979 75, 666 (1994). 10.1063/1.355813
14. F. Liu, M. G. Lagally, and J. Zang, MRS Bull. 0883-7694 34, 190 (2009).
15. R. Huang, H. Yin, J. Liang, K. D. Hobart, J. C. Sturm, and Z. Suo, Mater. Res. Soc. Symp. Proc. 0272-9172 695, 115 (2002).
16. H. Yin, R. Huang, K. D. Hobart, Z. Suo, T. S. Kuan, C. K. Inoki, S. R. Shieh, T. S. Duffy, F. J. Kub, and J. C. Sturm, J. Appl. Phys. 0021-8979 91, 9716 (2002). 10.1063/1.1479757
17. R. L. Peterson, K. D. Hobart, H. Yin, F. J. Kub, and J. C. Sturm, J. Appl. Phys. 0021-8979 100, 023537 (2006). 10.1063/1.2210810
18. See for e.g., R. L. Peterson, K. D. Hobart, H. Yin, and J. C. Sturm, Proceedings of the 2004 IEEE International SOI Conference, 2004, Vol. 39.
19. P. Hashemi, M. Canonico, J. K. W. Yang, L. Gomez, K. K. Berggren, and J. L. Hoyt, ECS Trans. 1938-5862 16, 57 (2008). 10.1149/1.2986753
20. J. Pivot, Thin Solid Films 0040-6090 89, 175 (1982). 10.1016/0040- 6090(82)90446-1