Multiwavelength micro-Raman analysis of strain in nanopatterned ultrathin strained silicon-on-insulator

Applied Physics Letters

Volumn 97, Issue 5, 2010, Pages

  Moutanabbir, O ^a   Reiche, M ^a   Hahnel A ^a   Oehme, M ^b   Kasper, E ^b  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BURIED OXIDES; DEEP UV; HETEROGENEOUS DISTRIBUTIONS; HETEROSTRUCTURES; LATERAL DIMENSION; MICRO-RAMAN; MICRO-RAMAN ANALYSIS; MULTIWAVELENGTH; NANO-DEVICES; NANOPATTERNING; STRAIN BEHAVIORS; STRAIN EVOLUTION; STRAINED SILICON-ON-INSULATOR; SURFACE AND INTERFACES; TENSILE STRAINED SILICON; ULTRA-THIN;

GERMANIUM;

EID: 77955745695     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3475399     Document Type: Article

References (16)

1. M. Chu, Y. Sun, U. Aghoram, and S. E. Thompson, Annu. Rev. Mater. Res. ARMRCU 1531-7331 39, 203 (2009). 10.1146/annurev-matsci-082908-145312
2. G. K. Celler and S. Cristoloveanu, J. Appl. Phys. JAPIAU 0021-8979 93, 4955 (2003). 10.1063/1.1558223
3. S. Baudot, J. Eymery, F. Andrieu, V. Vidal, F. Allain, L. Bŕvard, and O. Faynot, Proceedings of the 39th European Solid-State Dev. Res. Conf. (ESSDERC), 2009, pp. 391-394.
4. T. A. Langdo, M. T. Currie, A. Lochtefled, R. Hammond, J. A. Carlin, M. E. Erdtmann, G. Braithwaite, V. K. Yang, C. J. Vineis, H. Badawi, and M. T. Bulsara, Appl. Phys. Lett. APPLAB 0003-6951 82, 4256 (2003). 10.1063/1.1581371
5. T. S. Drake, C. Ní Chĺirigh, M. L. Lee, A. J. Pitera, E. A. Fitzgerald, D. A. Antoniadis, D. H. Anjum, J. Li, R. Hull, N. Klymko, and J. L. Hoyt, Appl. Phys. Lett. APPLAB 0003-6951 83, 875 (2003). 10.1063/1.1598649
6. O. Moutanabbir, M. Reiche, A. Hähnel, W. Erfurth, U. Gösele, M. Motohashi, A. Tarun, N. Hayazawa, and S. Kawata, Nanotechnology NNOTER 0957-4484 21, 134013 (2010). 10.1088/0957-4484/21/13/134013
7. S. Baudot, F. Andrieu, F. Rieutord, and J. Eymery, J. Appl. Phys. JAPIAU 0021-8979 105, 114302 (2009). 10.1063/1.3137200
8. R. Z. Lei, W. Tsai, I. Aberg, T. B. O'Reilly, J. L. Hoyt, D. A. Antoniadis, H. I. Smith, A. J. Paul, M. L. Green, J. Li, and R. Hull, Appl. Phys. Lett. APPLAB 0003-6951 87, 251926 (2005). 10.1063/1.2149153 (Pubitemid 41816126)
9. O. Moutanabbir, M. Reiche, W. Erfurth, F. Naumann, M. Petzold, and U. Gösele, Appl. Phys. Lett. APPLAB 0003-6951 94, 243113 (2009). 10.1063/1.3157134
10. D. Gu, M. Zhu, G. K. Celler, and H. Baumgart, Electrochem. Solid-State Lett. ESLEF6 1099-0062 12, H113 (2009). 10.1149/1.3068300
11. D. L. Sales, J. Pizarro, P. L. Galindo, R. Garcia, G. Trevisi, P. Frigeri, L. Nasi, S. Franchi, and S. I. Molina, Nanotechnology NNOTER 0957-4484 18, 475503 (2007). 10.1088/0957-4484/18/47/475503 (Pubitemid 350050158)
12. K. Usuda, T. Numata, T. Irisawa, N. Hirashita, and S. Takagi, Mater. Sci. Eng., B MSBTEK 0921-5107 124-125, 143 (2005). 10.1016/j.mseb.2005.08.062 (Pubitemid 41661007)
13. M. Htch, F. Houdellier, F. Hüe, and E. Snoeck, Nature (London) NATUAS 0028-0836 453, 1086 (2008). 10.1038/nature07049 (Pubitemid 351871739)
14. H. C. Kang, H. Yan, R. P. Winarski, M. V. Holt, J. Maser, C. Liu, R. Conley, S. Vogt, A. T. Macrander, and G. B. Stephenson, Appl. Phys. Lett. APPLAB 0003-6951 92, 221114 (2008). 10.1063/1.2912503
15. V. Chamard, J. Stangl, G. Carbone, A. Diaz, G. Chen, C. Alfonso, C. Mocuta, and T. H. Metzger, Phys. Rev. Lett. PRLTAO 0031-9007 104, 165501 (2010). 10.1103/PhysRevLett.104.165501
16. I. De Wolf, Semicond. Sci. Technol. SSTEET 0268-1242 11, 139 (1996). 10.1088/0268-1242/11/2/001