Strain-induced shift of phonon modes in Si1 - x Gex alloys

Materials Science in Semiconductor Processing

Volumn 9, Issue 4-5 SPEC. ISS., 2006, Pages 541-545

  Pezzoli, F ^a   Grilli, E ^a   Guzzi, M ^a   Sanguinetti, S ^a   Chrastina, D ^b   Isella, G ^b   von Kanel H ^b   Wintersberger, E ^c   Stangl, J ^c   Bauer, G ^c  

^a UNIVERSITY OF MILANO BICOCCA   (Italy)

^b POLITECNICO DI MILANO   (Italy)

^c JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

Raman spectroscopy; Si1 x Gex alloys; Strain

Indexed keywords

PHONONS; RAMAN SPECTROSCOPY; SILICON ALLOYS; STRAIN;

PHONON STRAIN SHIFT; RAMAN ACTIVE OPTICAL PHONON MODES; SI1 - X GEX ALLOYS;

GERMANIUM ALLOYS;

EID: 33845197307     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.08.046     Document Type: Article

References (32)

1. Whall T.E., and Parker E.H.C. J Phys D 31 (1998) 1397
2. Lee M.L., Fitzgerald E.A., Bulsara M.T., Currie M.T., and Lochtefeld A. J Appl Phys 97 (2005) 011101
3. Paul D.J. Semicond Sci Technol 19 (2004) R75
4. Bauer M., Schöllhorn C., Lyutovich K., Kasper E., Jutzi M., and Berroth M. Mat Sci Eng B 89 (2002) 77
5. Dismukes J.P., Ekstrom L., and Paff R.J. J Phys Chem 68 (1964) 3021
6. Kasper E., Schuh A., Bauer G., Holländer B., and Kibbel H. J Cryst Growth 157 (1995) 68
7. Matthews J.W., and Blakeslee A.E. J Cryst Growth 32 (1974) 265
8. People R., and Bean J.C. Appl Phys Lett 47 (1985) 322
9. Fitzgerald E.A., Xie Y.-H., Green M.L., Brasen D., Kortan A.R., Michel J., et al. Appl Phys Lett 59 (1991) 811
10. Tsang J.C., Mooney P.M., Dacol F., and Chu J.O. J Appl Phys 75 (1994) 8098
11. Renucci MA, Renucci JB, Cardona M. Flammarion Sciences, Paris, 1971. p. 326.
12. Brya W.J. Solid State Commun 12 (1973) 253
13. Alonso M.I., and Winer K. Phys Rev B 39 (1989) 10056
14. Ishidate T., Katagiri S., Inoue K., Shibuya M., Tsuji K., and Minomura S. J Phys Soc Jpn 53 (1984) 2584
15. Pezzoli F., Martinelli L., Grilli E., Guzzi M., Sanguinetti S., Bollani M., et al. Mat Sci Eng B 124-125 (2005) 127
16. Lockwood D.J., and Baribeau J.-M. Phys Rev B 45 (1992) 8565
17. Schmidt J., Vogg G., Bensch F., Kreuzer S., Ramm P., Zollner S., et al. Mat Sci Semicond Process 8 (2005) 267
18. Nakashima S., Mitani T., Ninomiya M., and Matsumoto K. J Appl Phys 99 (2006) 053512
19. Cerdeira F., Buchenauer C.J., Pollak F.H., and Cardona M. Phys Rev B 5 (1972) 580
20. Zinger G.M., Ipatova I.P., and Subashiev A.V. Sov Phys Semicond 11 (1977) 383
21. de Gironcoli S. Phys Rev B 46 (1992) 2412
22. de Gironcoli S., and Baroni S. Phys Rev Lett 69 (1992) 1959
23. Rücker H., and Methfessel M. Phys Rev B 52 (1995) 11059
24. Keating P.N. Phys Rev 145 (1966) 637
25. Franz M., Dombrowski K.F., Rücker H., Dietrich B., Pressel K., Barz A., et al. Phys Rev B 59 (1999) 10614
26. Nilsson G., and Nelin G. Phys Rev B 6 (1972) 3777
27. Tubino R., Piseri L., and Zerbi G. J Chem Phys 56 (1972) 1022
28. Sui Z., Burke H.H., and Herman I.P. Phys Rev B 48 (1993) 2162
29. Brunner K. EMIS Datareviews, 1999. p. 115.
30. Cerdeira F., Pinczuk A., Bean J.C., Batlogg B., and Wilson B.A. Appl Phys Lett 45 (1984) 1138
31. Rosenblad C., von Känel H., Kummer M., Dommann A., and Müller E. Appl Phys Lett 76 (2000) 427
32. Stoehr M., Aubel D., Juillaguet S., Bischoff J.L., Kubler L., and Bolmont D. Phys Rev B 53 (1996) 6923