Physics of process induced uniaxially strained Si

Materials Science and Engineering: B

Volumn 135, Issue 3, 2006, Pages 179-183

  Sun, Y ^a   Sun, G ^a   Parthasarathy, S ^a   Thompson, S E ^a  

^a University of Florida   (United States)

Author keywords

Biaxial stress; Mobility enhancement; Strained Si; Uniaxial stress

Indexed keywords

BAND STRUCTURE; COST EFFECTIVENESS; STRAIN; STRESS ANALYSIS; STRESS CONCENTRATION;

BIAXIAL STRESS; MOBILITY ENHANCEMENT; TECHNOLOGY NODES; UNIAXIAL STRESS;

SEMICONDUCTING SILICON;

EID: 33750721388     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2006.08.024     Document Type: Article

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