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Volumn 71, Issue , 2012, Pages 93-100

Impact of self-heating and substrate effects on small-signal output conductance in UTBB SOI MOSFETs

Author keywords

Frequency response; Output conductance; Self heating effect; Substrate coupling; Ultra thin body FD SOI MOSFETs; Ultra thin BOX

Indexed keywords

OUTPUT CONDUCTANCE; SELF-HEATING EFFECT; SUBSTRATE COUPLING; ULTRA-THIN; ULTRATHIN BODY;

EID: 84858698599     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2011.10.027     Document Type: Conference Paper
Times cited : (46)

References (29)
  • 2
    • 84858702345 scopus 로고    scopus 로고
    • http://www.public.itrs.net.
  • 7
    • 77950297252 scopus 로고    scopus 로고
    • Local Vth Variability and scalability in Silicon-on-Thin-BOX (SOTB) CMOS with small random-dopant fluctuation
    • N. Sugii, R. Tsuchiya, T. Ishigaki, Y. Morita, H. Yoshimoto, and S. Kimura Local Vth Variability and scalability in Silicon-on-Thin-BOX (SOTB) CMOS with small random-dopant fluctuation IEEE Trans Electron Dev 57 4 2010 835 845
    • (2010) IEEE Trans Electron Dev , vol.57 , Issue.4 , pp. 835-845
    • Sugii, N.1    Tsuchiya, R.2    Ishigaki, T.3    Morita, Y.4    Yoshimoto, H.5    Kimura, S.6
  • 8
    • 76349087827 scopus 로고    scopus 로고
    • Substrate impact on threshold voltage and subthreshold slope of sub-32 nm ultra thin SOI MOSFETs with thin buried oxide and undoped channel
    • S. Burignat, D. Flandre, MK Md Arshad, V. Kilchytska, F. Andrieu, and O. Faynot Substrate impact on threshold voltage and subthreshold slope of sub-32 nm ultra thin SOI MOSFETs with thin buried oxide and undoped channel Solid State Electron 54 2 2010 213 219
    • (2010) Solid State Electron , vol.54 , Issue.2 , pp. 213-219
    • Burignat, S.1    Flandre, D.2    Arshad, M.K.M.3    Kilchytska, V.4    Andrieu, F.5    Faynot, O.6
  • 10
    • 37749019234 scopus 로고    scopus 로고
    • Analysis of self-heating effects in ultrathin-body SOI MOSFETs by device simulation
    • C. Fiegna, Y. Yang, E. Sangiorgi, and A.G. O'Neill Analysis of self-heating effects in ultrathin-body SOI MOSFETs by device simulation IEEE Trans Electron Dev 55 1 2008 233 244
    • (2008) IEEE Trans Electron Dev , vol.55 , Issue.1 , pp. 233-244
    • Fiegna, C.1    Yang, Y.2    Sangiorgi, E.3    O'Neill, A.G.4
  • 11
    • 0035310019 scopus 로고    scopus 로고
    • Self-heating characterization for SOI MOSFET based on AC output conductance
    • W. Jin, W. Liu, S.K.H. Fung, P.C.H. Chan, and C. Hu Self-heating characterization for SOI MOSFET based on AC output conductance IEEE Trans Electron Dev 48 4 2001 730 736
    • (2001) IEEE Trans Electron Dev , vol.48 , Issue.4 , pp. 730-736
    • Jin, W.1    Liu, W.2    Fung, S.K.H.3    Chan, P.C.H.4    Hu, C.5
  • 13
    • 0042592899 scopus 로고    scopus 로고
    • Floating effective back-gate effect on the small-signal output conductance of SOI MOSFETs
    • V. Kilchytska, D. Levacq, D. Lederer, J.P. Raskin, and D. Flandre Floating effective back-gate effect on the small-signal output conductance of SOI MOSFETs IEEE Electron Dev Lett 24 6 2003 414 416
    • (2003) IEEE Electron Dev Lett , vol.24 , Issue.6 , pp. 414-416
    • Kilchytska, V.1    Levacq, D.2    Lederer, D.3    Raskin, J.P.4    Flandre, D.5
  • 15
  • 17
    • 45049084003 scopus 로고    scopus 로고
    • Silicon-on-nothing MOSFETs: An efficient solution for parasitic substrate coupling suppression in SOI devices
    • V. Kilchytska, D. Flandre, and J.P. Raskin Silicon-on-nothing MOSFETs: an efficient solution for parasitic substrate coupling suppression in SOI devices Appl Surf Sci 254 19 2008 6168 6173
    • (2008) Appl Surf Sci , vol.254 , Issue.19 , pp. 6168-6173
    • Kilchytska, V.1    Flandre, D.2    Raskin, J.P.3
  • 21
    • 0035250275 scopus 로고    scopus 로고
    • Small-signal operation of semiconductor devices including self-heating, with application to thermal characterization and instability analysis
    • DOI 10.1109/16.902734
    • N. Rinaldi Small-signal operation of semiconductor devices including self-heating, with application to thermal characterization and instability analysis IEEE Trans Electron Dev 48 2 2001 323 331 (Pubitemid 32254557)
    • (2001) IEEE Transactions on Electron Devices , vol.48 , Issue.2 , pp. 323-331
    • Rinaldi, N.1
  • 22
    • 0029271009 scopus 로고
    • Analysis and modeling of self-heating effects in thin-film SOI MOSFETs as a function of temperature
    • J. Jomaah, G. Ghibaudo, and F. Balestra Analysis and modeling of self-heating effects in thin-film SOI MOSFETs as a function of temperature Solid State Electron 38 3 1995 615 618
    • (1995) Solid State Electron , vol.38 , Issue.3 , pp. 615-618
    • Jomaah, J.1    Ghibaudo, G.2    Balestra, F.3
  • 25
    • 1442360790 scopus 로고    scopus 로고
    • Advanced SOI MOSFET's with buried alumina and ground plane: Self-heating and short channel effects
    • K. Oshima, S. Cristoloveanu, B. Guillaumot, H. Iwai, and S. Deleonibus Advanced SOI MOSFET's with buried alumina and ground plane: self-heating and short channel effects Solid State Electron 48 6 2004 907 917
    • (2004) Solid State Electron , vol.48 , Issue.6 , pp. 907-917
    • Oshima, K.1    Cristoloveanu, S.2    Guillaumot, B.3    Iwai, H.4    Deleonibus, S.5
  • 27
    • 84857027822 scopus 로고    scopus 로고
    • Self-heating effects in nanoscale FD SOI devices: The role of the substrate, boundary conditions at various interfaces, and the dielectric material type for the BOX
    • D. Vasileska, K. Raleva, and S.M. Goodnick Self-heating effects in nanoscale FD SOI devices: the role of the substrate, boundary conditions at various interfaces, and the dielectric material type for the BOX IEEE Trans Electron Dev 56 12 2009 3064 3071
    • (2009) IEEE Trans Electron Dev , vol.56 , Issue.12 , pp. 3064-3071
    • Vasileska, D.1    Raleva, K.2    Goodnick, S.M.3
  • 29
    • 0037097910 scopus 로고    scopus 로고
    • Measurement of thermal conductivity of silicon dioxide thin films using a 3ω method
    • T. Yamane, N. Nagai, S. Katayama, and M. Todoki Measurement of thermal conductivity of silicon dioxide thin films using a 3ω method J Appl Phys 91 12 2002 9772 9776
    • (2002) J Appl Phys , vol.91 , Issue.12 , pp. 9772-9776
    • Yamane, T.1    Nagai, N.2    Katayama, S.3    Todoki, M.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.