Simulation of self-heating effects in different SOI MOS architectures

Solid-State Electronics

Volumn 53, Issue 4, 2009, Pages 445-451

  Braccioli, M ^a   Curatola, G ^b   Yang, Y ^c   Sangiorgi, E ^a   Fiegna, C ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b NXP TSMC Research Center   (Belgium)

^c GEORGE MASON UNIVERSITY   (United States)

Author keywords

Electro thermal simulations; FinFET; MOS transistor; Self heating; Silicon on insulator

Indexed keywords

BICMOS TECHNOLOGY; FIELD EFFECT TRANSISTORS; FINS (HEAT EXCHANGE); GATES (TRANSISTOR); HEATING; MECHANISMS; MICROSENSORS; MONTE CARLO METHODS; MOSFET DEVICES; THREE DIMENSIONAL; TRANSISTOR TRANSISTOR LOGIC CIRCUITS;

ELECTRO-THERMAL SIMULATIONS; FINFET; MOS TRANSISTOR; SELF-HEATING; SILICON-ON-INSULATOR;

SEMICONDUCTING SILICON;

EID: 62849105034     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.09.020     Document Type: Article

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