Reduced self-heating by strained silicon substrate engineering

Applied Surface Science

Volumn 254, Issue 19, 2008, Pages 6182-6185

  O'Neill, A ^a   Agaiby, R ^a   Olsen, S ^a   Yang, Y ^a   Hellstrom, P E ^b   Ostling, M ^b   Oehme, M ^c   Lyutovich, K ^c   Kasper, E ^c   Eneman, G ^d   Verheyen, P ^d   Loo, R ^d   Claeys, C ^d   Fiegna, C ^e   Sangiorgi, E ^e  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^c UNIVERSITY OF STUTTGART   (Germany)

^d IMEC   (Belgium)

^e UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

MOSFET; Self heating; Strained silicon

Indexed keywords

GERMANIUM COMPOUNDS; HEATING; MOSFET DEVICES; SILICON COMPOUNDS; STRAINED SILICON; THERMAL CONDUCTIVITY;

ELECTRICAL PERFORMANCE; MOS-FET; PERFORMANCE ENHANCEMENTS; SELF-HEATING; SELF-HEATING EFFECT; STRAINED SI MOSFETS; SUBSTRATE ENGINEERING; THERMAL RESISTANCE MEASUREMENT;

SUBSTRATES;

EID: 45049087611     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.02.172     Document Type: Article

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