Frequency variation of the small-signal output conductance of decananometer MOSFETs due to substrate crosstalk

IEEE Electron Device Letters

Volumn 28, Issue 5, 2007, Pages 419-421

  Kilchytska, Valeria ^a   Pailloncy, Guillaume ^a   Lederer, Dimitri ^a   Raskin, Jean Pierre ^a   Collaert, Nadine ^b   Jurczak, Malgorzata ^b   Flandre, Denis ^a  

^a UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

^b IMEC   (Belgium)

Author keywords

Device simulation; Frequency response; Multiple gate devices; Output conductance; Short channel effect; Silicon on insulator (SOI) MOSFETs; Substrate crosstalk

Indexed keywords

COUPLED CIRCUITS; CROSSTALK; ELECTRIC CONDUCTANCE; SILICON ON INSULATOR TECHNOLOGY; TWO DIMENSIONAL;

BURIED OXIDE; LOW-FREQUENCY TRANSITION; SELF-HEATING EFFECT; SHORT CHANNEL EFFECT;

MOSFET DEVICES;

EID: 34247615579     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.895374     Document Type: Article

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