Advanced SOI MOSFETs with buried alumina and ground plane: Self-heating and short-channel effects

Solid-State Electronics

Volumn 48, Issue 6, 2004, Pages 907-917

  Oshima, K ^a,b,c   Cristoloveanu, S ^a   Guillaumot, B ^d   Iwai, H ^c   Deleonibus, S ^b  

^a IMEP LAHC   (France)

^b CEA LETI   (France)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^d STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CARRIER MOBILITY; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; DIELECTRIC MATERIALS; INTERFACES (MATERIALS); MOSFET DEVICES; THERMAL CONDUCTIVITY; THERMAL EFFECTS;

SELF-HEATING; SHORT-CHANNEL EFFECTS (SCE); THERMAL CIRCUITS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 1442360790     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2003.12.026     Document Type: Article

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