Highly suppressed short-channel effects in ultrathin SOI n-MOSFET's

IEEE Transactions on Electron Devices

Volumn 47, Issue 2, 2000, Pages 354-359

  Suzuki, Eiichi ^a,b   Ishii, Kenichi ^a   Kanemaru, Seigo ^a   Maeda, Tatsuro ^a   Tsutsumi, Toshiyuki ^a   Sekigawa, Toshihiro ^a   Nagai, Kiyoko ^a   Hiroshima, Hiroshi ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b MEIJI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE;

SHORT-CHANNEL EFFECTS;

MOSFET DEVICES;

EID: 0033900449     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.822280     Document Type: Article

References (16)

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