Self-heating effects in nanoscale FD SOI devices: The role of the substrate, boundary conditions at various interfaces, and the dielectric material type for the BOX

IEEE Transactions on Electron Devices

Volumn 56, Issue 12, 2009, Pages 3064-3071

  Vasileska, Dragica ^a   Raleva, Katerina ^b   Goodnick, Stephen M ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

^b SS CYRIL AND METHODIUS UNIVERSITY   (Macedonia)

Author keywords

FD SOI devices; Particle based device simulations; Self heating effects; Thermal effects

Indexed keywords

ACCURATE MODELING; ACTIVE CHANNELS; ALN; CURRENT DEGRADATION; FD-SOI DEVICES; FULLY DEPLETED; GATE CONTACT; NANO SCALE; ON-CURRENTS; PARTICLE-BASED DEVICE SIMULATIONS; SELF-HEATING EFFECT; SILICON-ON-INSULATORS; SIMULATION DOMAIN; SOI DEVICES;

BICMOS TECHNOLOGY; BOUNDARY CONDITIONS; DEGRADATION; DIELECTRIC MATERIALS; FINITE DIFFERENCE METHOD; NANOTECHNOLOGY; SILICA; SILICON ON INSULATOR TECHNOLOGY; SILICON OXIDES; THERMAL EFFECTS;

INTERFACES (MATERIALS);

EID: 84857027822     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2032615     Document Type: Article

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