RF extraction of self-heating effects in FinFETs of various geometries

2011 IEEE 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2011 - Digest of Papers

Volumn , Issue , 2011, Pages 117-120

  Makovejev, Sergej ^a   Olsen, Sarah ^a   Raskin, Jean Pierre ^b  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

^b UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

EXTRACTION TECHNIQUES; FIN SPACING; FIN WIDTHS; FINFETS; N-CHANNEL; SELF-HEATING EFFECT; SILICON-ON-INSULATORS; THERMAL RESISTANCE;

BICMOS TECHNOLOGY; FINS (HEAT EXCHANGE); HEATING; INTEGRATED CIRCUITS; RADIOFREQUENCY SPECTROSCOPY; SILICON ON INSULATOR TECHNOLOGY;

MONOLITHIC INTEGRATED CIRCUITS;

EID: 79952848105     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SIRF.2011.5719331     Document Type: Conference Paper

References (11)

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