Analysis of threading dislocations in void shape controlled GaN re-grown on hexagonally patterned mask-less GaN

Journal of Crystal Growth

Volumn 344, Issue 1, 2012, Pages 59-64

  Ali, M ^a   Romanov, A E ^b,c   Suihkonen, S ^a   Svensk, O ^a   Sintonen, S ^a   Sopanen, M ^a   Lipsanen, H ^a   Nevedomsky, V N ^c   Bert, N A ^c   Odnoblyudov, M A ^b   Bougrov, V E ^b  

^a AALTO UNIVERSITY   (Finland)

^b CJSC Optogan   (Russian Federation)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

A1. Defects; A3. Metalorganic vapor phase epitaxy; A3. Pendeo epitaxy; B1. Nitrides

Indexed keywords

DIFFERENT SIZES; DIFFRACTION REFLECTIONS; GAN LAYERS; GROWTH MODES; HEXAGONAL MORPHOLOGY; HEXAGONAL PATTERN; LATERAL EPITAXY; PENDEO-EPITAXY; SIDEWALL ANGLES; THREADING DISLOCATION; VOID SHAPE; XRD;

EPITAXIAL GROWTH; FULL WIDTH AT HALF MAXIMUM; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM NITRIDE;

EID: 84858071964     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.01.047     Document Type: Article

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