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Volumn 3, Issue 7, 2010, Pages
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Enhanced the light extraction efficiency of an InGaN light emitting diodes with an embedded rhombus-like air-void structure
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Author keywords
[No Author keywords available]
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Indexed keywords
AIR VOID STRUCTURE;
GAN LAYERS;
LATERAL GROWTH;
LED STRUCTURE;
LIFT-OFF PROCESS;
LIGHT ENHANCEMENT;
LIGHT EXTRACTION;
LIGHT-EXTRACTION EFFICIENCY;
PATTERNED SAPPHIRE SUBSTRATE;
SAPPHIRE SUBSTRATES;
WET-ETCHING PROCESS;
EXTRACTION;
GALLIUM ALLOYS;
GALLIUM NITRIDE;
LIGHT EMISSION;
LIGHT EMITTING DIODES;
SAPPHIRE;
WET ETCHING;
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EID: 77954471038
PISSN: 18820778
EISSN: 18820786
Source Type: Journal
DOI: 10.1143/APEX.3.071002 Document Type: Article |
Times cited : (8)
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References (11)
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