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Volumn 3, Issue 7, 2010, Pages

Enhanced the light extraction efficiency of an InGaN light emitting diodes with an embedded rhombus-like air-void structure

Author keywords

[No Author keywords available]

Indexed keywords

AIR VOID STRUCTURE; GAN LAYERS; LATERAL GROWTH; LED STRUCTURE; LIFT-OFF PROCESS; LIGHT ENHANCEMENT; LIGHT EXTRACTION; LIGHT-EXTRACTION EFFICIENCY; PATTERNED SAPPHIRE SUBSTRATE; SAPPHIRE SUBSTRATES; WET-ETCHING PROCESS;

EID: 77954471038     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.3.071002     Document Type: Article
Times cited : (8)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.