Void shape control in GaN re-grown on hexagonally patterned mask-less GaN

Journal of Crystal Growth

Volumn 315, Issue 1, 2011, Pages 188-191

  Ali, M ^a   Romanov, A E ^b   Suihkonen, S ^a   Svensk, O ^a   Trm, P T ^a   Sopanen, M ^a   Lipsanen, H ^a   Odnoblyudov, M A ^b   Bougrov, V E ^b  

^a AALTO UNIVERSITY   (Finland)

^b Optogan GmbH   (Germany)

Author keywords

A3. Gallium nitride patterning; A3. Metalorganic vapor phase epitaxy; A3. Pendeo epitaxy; A3. Voids; B1. Nitrides

Indexed keywords

A3. GALLIUM NITRIDE PATTERNING; A3. VOIDS; B1. NITRIDES; METAL-ORGANIC VAPOR PHASE EPITAXY; PENDEO-EPITAXY;

EPITAXIAL GROWTH; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; SCANNING ELECTRON MICROSCOPY; VAPORS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

GALLIUM ALLOYS;

EID: 79551687166     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.08.055     Document Type: Article

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