Freestanding GaN substrate by advanced facet-controlled epitaxial lateral overgrowth technique with masking side facets

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 1-7, 2005, Pages

  Bohyama, Shinya ^a   Miyake, Hideto ^a   Hiramatsu, Kazumasa ^a   Tsuchida, Yoshihiko ^b   Maeda, Takayoshi ^b  

^a MIE UNIVERSITY   (Japan)

^b SUMITOMO CHEMICAL CO LTD   (Japan)

Author keywords

Cathodoluminescence; Epitaxial lateral overgrowth; Facet controlled epitaxial lateral overgrowth; GaN; Selective area growth

Indexed keywords

CATHODOLUMINESCENCE; COALESCENCE; EPITAXIAL GROWTH; MASKS; SEPARATION; SUBSTRATES; SURFACES;

EPITAXIAL LATERAL OVERGROWTH; FACET-CONTROLLED EPITAXIAL LATERAL OVERGROWTH (FACELO); FACETS; SELECTIVE AREA GROWTH (SAG);

GALLIUM NITRIDE;

EID: 17444364164     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.L24     Document Type: Article

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