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Volumn 311, Issue 17, 2009, Pages 4167-4170

Reducing dislocation density in GaN films using a cone-shaped patterned sapphire substrate

(5) Shin, Hui Youn a Kwon, S K a Chang, Y I a Cho, M J a Park, K H a

Author keywords

A1. Threading dislocation; A1. Transmission electron microscope (TEM); B1. Gallium Nitride; B1. Patterned sapphire substrate (PSS)

Indexed keywords

A1. THREADING DISLOCATION; A1. TRANSMISSION ELECTRON MICROSCOPE (TEM); B1. GALLIUM NITRIDE; B1. PATTERNED SAPPHIRE SUBSTRATE (PSS); DISLOCATION DENSITIES; GAN BASED LED; GAN FILM; GAN LAYERS; GROWTH STAGES; HRTEM IMAGES; INCOHERENCY; LATERAL OVERGROWTH; LATTICE DISTORTIONS; METALORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION STAGES; PATTERNED SAPPHIRE SUBSTRATE; RESIDUAL STRAINS; SAPPHIRE SUBSTRATES; STRAIN MAPPING; TEM; THREADING DISLOCATION;

CORUNDUM; ELECTRON MICROSCOPES; GALLIUM NITRIDE; LATTICE MISMATCH; LIGHT TRANSMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; SAPPHIRE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WIRES; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM ALLOYS;

EID: 68549136628 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2009.07.023 Document Type: Article

Times cited : (79)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.