Dislocation filtering in GaN nanostructures

Nano Letters

Volumn 10, Issue 5, 2010, Pages 1568-1573

  Colby, Robert ^a   Liang, Zhiwen ^a   Wildeson, Isaac H ^a   Ewoldt, David A ^a   Sands, Timothy D ^a   Garcia, R Edwin ^a   Stach, Eric A ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

Dislocations; Light emitting diodes; Nanorods; Numerical simulation; Transmission electron microscopy

Indexed keywords

ACTIVE REGIONS; DATA SETS; DEVICE LIFETIME; DISLOCATION FILTERING; DISLOCATIONS; EIGEN-STRAIN; EXTENDED DEFECT; FINITE ELEMENT; FREE SURFACES; GAN NANORODS; GAN NANOSTRUCTURES; GEOMETRIC PARAMETER; HEXAGONAL PYRAMIDS; IMAGE FORCE; NANOPOROUS TEMPLATES; NANOSTRUCTURED SEMICONDUCTOR; NUMERICAL MODELING; NUMERICAL SIMULATION; OBSERVED DATA; ORDERS OF MAGNITUDE; PLANAR HETEROSTRUCTURES; SELECTIVE AREA GROWTH; THREADING DISLOCATION; THREADING DISLOCATION DENSITIES; UNDERLAYERS;

COMPUTER SIMULATION; CRYSTALLOGRAPHY; DIODES; FINITE ELEMENT METHOD; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; LIGHT TRANSMISSION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DIODES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; SURFACES; TRANSMISSION ELECTRON MICROSCOPY;

NANORODS;

GALLIUM; GALLIUM NITRIDE; NANOMATERIAL;

ARTICLE; CHEMICAL MODEL; CHEMISTRY; COMPUTER SIMULATION; CONFORMATION; CRYSTALLIZATION; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SURFACE PROPERTY;

COMPUTER SIMULATION; CRYSTALLIZATION; GALLIUM; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MODELS, CHEMICAL; MOLECULAR CONFORMATION; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; SURFACE PROPERTIES;

EID: 77952327949     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl9037455     Document Type: Article

References (30)

1. Law, M.; Goldberger, J.; Yang, P. Seminconductor nanowires and nanotubes Ann. Rev. Mater. Res. 2004, 34, 83-122
2. Hirth, J. P.; Lothe, J. Theory of Dislocations, 2 nd ed., John-Wiley and Sons: New York, 1982; pp 149× 152.
3. Luryi, S.; Suhir, E. New approach to the high quality epitaxial growth of lattice-mismatched materials Appl. Phys. Lett. 1986, 49, 140-142
4. Zubia, D.; Hersee, S. D. Nanoheteroepitaxy: The Application of nanostructuring and substrate compliance to the heteroepitaxy of mismatched semiconductor materials J. Appl. Phys. 1999, 85, 6492-6496
5. Hersee, S.; Zubia, D.; Sun, X.; Bommena, R.; Fairchild, M.; Zhang, S.; Burckel, D.; Fraunglass, A.; Breuck, S. Nanoheteroepitaxy for the Integration of Highly Mismatched Semiconductor Materials IEEE J. Quantum Elec. 2002, 38, 1017-28
6. Ertekin, E.; Greaney, P. A.; Chrzan, D. C.; Sands, T. D. Equilibrium limits of coherency in strained nanowire heterostructures J. Appl. Phys. 2005, 97, 114325-10
7. Wu, Y.; Fan, R.; Yang, P. Block-by-Block Growth of Single-Crystalline Si/SiGe Superlattice Nanowires Nano Lett. 2002, 2, 83-86
8. Bjork, M. T.; Ohlsson, B. J.; Sass, T.; Persson, A. I.; Thelander, C.; Magnusson, M. H.; Deppert, K.; Wallenberg, L. R.; Samuelson, L. One-dimensional heterostructures in semiconductor nanowhiskers Appl. Phys. Lett. 2002, 80, 1058-1060
9. Lieber, C. M. Nanowire Superlattices Nano Lett. 2002, 2, 81-82
10. Nakamura, S. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes Science 1998, 281, 956-961 (Pubitemid 28399238)
11. Schubert, M. F.; Chhajed, S.; Kim, J. K.; Schubert, E. F.; Koleske, D. D.; Crawford, M. H.; Lee, S. R.; Fischer, A. J.; Thaler, G.; Banas, M. A. Effect of dislocation density on efficiency droop in GaInN/GaN light-emitting diodes Appl. Phys. Lett. 2007, 91, 231114-1
12. Gibart, P. Metal organic vapour phase epitaxy of GaN and lateral overgrowth Rep. Prog. Phys. 2004, 67, 667-715
13. Farrer, J.; Carter, C. Defect structure in GaN pyramids J. Mater. Sci. 2006, 41, 779-792
14. Zan, K. Y.; Chu, S. J. Orders of magnitude reduction in dislocation density in GaN grown on Si (111) by nano lateral epitaxial overgrowth Phys. Status Solidi C 2008, 5,6, 1585-1588
15. Oliver, M. H.; Schroeder, J. L.; Ewoldt, D. A.; Wildeson, I. H.; Rawat, V.; Colby, R.; Cantwell, P. R.; Stach, E. A.; Sands, T. D. Organometallic vapor phase epitaxial growth of GaN on ZrN/AlN/Si substrates Appl. Phys. Lett. 2008, 93 023109-3
16. Wang, Y. D.; Zang, K. Y.; Chua, S. J.; Tripathy, S.; Zhou, H. L.; Fonstad, C. G. Improvement of microstructural and optical properties of GaN layer on sapphire by nanoscale lateral epitaxial overgrowth Appl. Phys. Lett. 2006, 88, 211908
17. Chen, Y.; Shiao, W.; Tang, T.; Chang, W.; Liao, C.; Lin, C.; Shen, K.; Yang, C. C.; Hsu, M.; Yeh, J.; Hsu, T. Threading dislocation evolution in patterned GaN nanocolumn growth and coalescence overgrowth J. Appl. Phys. 2009, 106 023521-6
18. Deb, P.; Kim, H.; Rawat, V.; Oliver, M.; Kim, S.; Marshall, M.; Stach, E.; Sands, T. Faceted and Vertically Aligned GaN Nanorod Arrays Fabricated without Catalysts or Lithography Nano Lett. 2005, 5, 1847-1851
19. Wildeson, I.; Colby, R.; Ewoldt, D.; Zakharov, D. N.; Stach, E. A.; Sands, T. D. III-nitride nanopyramid LEDs grown by organometallic vapor phase epitaxy. Submitted to J. Appl. Phys.
20. Gianuzzi, L. A.; Stevie, F. A. A review of focused ion beam milling techniques for TEM specimen preparation Micron 1999, 30, 197-204
21. Nabarro, F. R. N. Mathematical theory of stationary dislocations Adv. Phys. 1952, 1, 269-394
22. Eshelby, J. D. Screw Dislocations in Thin Rods J. Appl. Phys. 1953, 24, 176-179
23. Eshelby, J. D. The Continuum Theory of Lattice Defects. Advances in Research and Applications; Academic Press: New York, 1956; Vol. 3, pp 79× 144.
24. Coulomb, P.; Friedel, J. On the formation of cavities along dislocations. Dislocations and Mechanical Properties of Crystals; Wiley: New York, 1957; pp 555× 576.
25. Zhu, J. Formation of chiral branched nanowires by the Eshelby Twist Nat. Nanotechnol. 2008, 3, 477-481
26. Bierman, M. J.; Lau, Y. K. A.; Kvit, A. V.; Schmitt, A. L.; Jin, S. Dislocation-Driven Nanowire Growth and Eshelby Twist Science 2008, 320, 1060-1063
27. ABAQUS Finite Element Software Package (ABAQUS, 2008); http://www.simulia.com/.
28. Mura, T. Mechanics of elastic and inelastic solids 3-Micromechanics of defects in solids; Martinus Nijhoff Publishers: 1982.
29. Shodja, H. M.; Davoudi, K. M.; Gutkin, M. Y. Analysis of Displacement and Strain Fields of a Screw Dislocation in a Nanowire Using Gradient Elasticity Theory Scr. Mater. 2008, 59, 368-371
30. Fivel, C.; Gosling, T. J.; and Canova, G. R. Implementing Image Stresses in a 3D Dislocation Simulation Model. Simul. 1996, 4, 581-596