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Journal of Applied Physics

Volumn 102, Issue 3, 2007, Pages

Morphology of threading dislocations in high-resistivity GaN films observed by transmission electron microscopy

(9) Lu, L a Shen, B a Xu, F J a Xu, J a,a Gao, B a Yang, Z J a Zhang, G Y a Zhang, X P a Yu, D P a

a PEKING UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTRIC CONDUCTIVITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

ANNEALING PRESSURE; COALESCENCE RATE; SAPPHIRE SURFACES;

GALLIUM NITRIDE;

EID: 34548020785 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2768015 Document Type: Article

Times cited : (18)

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