Electrochemical metallization cells-blending nanoionics into nanoelectronics?

MRS Bulletin

Volumn 37, Issue 2, 2012, Pages 124-130

  Lu, Wei ^a   Jeong, Doo Seok ^b   Kozicki, Michael ^c   Waser, Rainer ^d  

^a UNIVERSITY OF MICHIGAN   (United States)

^b Korea Institute of Science and Technology   (South Korea)

^c ARIZONA STATE UNIVERSITY   (United States)

^d FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

filamentary; ionic conductor; memory; Nanoscale; thin film

Indexed keywords

CIRCUIT DESIGNS; COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGIES; COUNTER ELECTRODES; DEVICE OPERATIONS; ELECTROCHEMICAL PROCESS; ELECTRODE METALS; ENERGY EFFICIENT; FILAMENTARY; GATE ARRAYS; HIGH-PERFORMANCE COMPUTER ARCHITECTURE; INDUSTRIAL TECHNOLOGY; INSULATING LAYERS; IONIC CONDUCTOR; IONIC TRANSPORTS; MATERIAL SYSTEMS; MEMORY; MEMORY ARRAY; MEMORY TECHNOLOGY; NANO SCALE; NANOIONICS; NEUROMORPHIC CIRCUITS; PHYSICAL EFFECTS; POTENTIAL MATERIALS; RANDOM ACCESS MEMORIES; RESISTIVE RANDOM ACCESS MEMORY; SWITCHING SPEED; ULTRADENSE; WORKING PRINCIPLES;

BLENDING; CELLS; COMPUTER ARCHITECTURE; ELECTROCHEMICAL OXIDATION; ENERGY EFFICIENCY; IONIC CONDUCTION; METALLIZING; NANOTECHNOLOGY; REDOX REACTIONS; VAPOR DEPOSITION;

CYTOLOGY;

EID: 84857324881     PISSN: 08837694     EISSN: None     Source Type: Journal    
DOI: 10.1557/mrs.2012.5     Document Type: Article

References (80)

1. International Technology Roadmap for Semiconductors (ITRS), 2010 Edition www.itrs.net/Links/2010ITRS/Home2010.htm.
2. A. Chung, J. Deen, J.S. Lee, M. Meyyappan, Nanotechnology 21, 412001 (2010).
3. G.W. Burr, B.N. Kurdi, J.C. Scott, C.H. Lam, K. Gopalakrishnan, R.S. Shenoy, IBM J. Res. Dev. 52, 449 (2008).
4. Y. Hirose, H. Hirose, J. Appl. Phys. 47, 2767 (1976).
5. R. Waser, R. Dittmann, G. Staikov, K. Szot, Adv. Mater. 21, 2632 (2009).
6. R. Waser, M. Aono, Nat. Mater. 6, 833 (2007).
7. L.O. Chua, IEEE Trans. Circuit Theory 18, 507 (1971).
8. D.B. Strukov, G.S. Snider, D.R. Stewart, R.S. Williams, Nature 453, 80 (2008).
9. I. Valov, R. Waser, J.R. Jameson, M.N. Kozicki, Nanotechnology 22, 254003 (2011).
10. C. Schindler, G. Staikov, R. Waser, Appl. Phys. Lett. 94, 072109 (2009).
11. R. Bruchhaus, M. Honal, R. Symanczyk, M. Kund, J. Electrochem. Soc. 156, H729 (2009).
12. R. Symanczyk, R. Bruchhaus, R. Dittrich, M. Kund, IEEE Electron Device Lett. 30, 876 (2009).
13. U. Russo, D. Kamalanathan, D. Ielmini, A.L. Lacaita, M.N. Kozicki, IEEE Trans. Electron Devices 56, 1040 (2009).
14. D. Kamalanathan, U. Russo, D. Ielmini, M.N. Kozicki, IEEE Electron Device Lett. 30, 553 (2009).
15. M.N. Kozicki, M. Balakrishnan, C. Gopalan, C. Ratnakumar, M. Mitkova, 2005 Proc. Non-Volatile Memory Tech. Symp. 83 (2005).
16. M.N. Kozicki, C. Gopalan, M. Balakrishnan, M. Park, M. Mitkova, 2004 Proc. Non-Volatile Memory Tech. Symp. 10 (2004).
17. M. Balakrishnan, M.N. Kozicki, C. Gopalan, M. Mitkova, Device Research Conf. Digest 47 (2005).
18. D. Kamalanathan, S. Baliga, S.C.P. Thermadam, M. Kozicki, Proc. NonVolatile Memory Tech. Symp. 90 (2007).
19. C. Gopalan, Y. Ma, T. Gallo, J. Wang, E. Runnion, J. Saenz, F. Koushan, P. Blanchard, S. Hollmer, Solid-State Electron. 58, 54 (2011).
20. M.N. Kozicki, M. Mitkova, J. Non-Cryst. Solids 352, 567 (2006).
21. N.E. Gilbert, M.N. Kozicki, IEEE J. Solid-State Circuits 42, 1383 (2007).
22. R. Symanczyk, M. Balakrishnan, C. Gopalan, T. Happ, M.N. Kozicki, M. Kund, T. Mikolajick, M. Mitkova, M. Park, C.-U. Pinnow, J. Robertson, K.-D. Ufert, Proc. Non-Volatile Memory Tech. Symp. 17 (2003).
23. M. Kund, G. Beitel, C.U. Pinnow, T. Rohr, J. Schumann, R. Symanczyk, K.D. Ufert, G. Muller, IEDM Tech. Dig. 2005, 773 (2005).
24. C. Schindler, M. Meier, R. Waser, M.N. Kozicki, Proc. Non-Volatile Memory Tech. Symp. 81 (2007).
25. M.N. Kozicki, M. Park, M. Mitkova, IEEE Trans. Nanotechnol. 4, 331 (2005).
26. M.N. Kozicki, M. Mitkova, M. Park, M. Balakrishnan, C. Gopalan, Superlattices Microstruct. 34, 459 (2003).
27. M. Mitkova, M.N. Kozicki, J. Non-Cryst. Solids 299, 1023 (2002).
28. C.J. Kim, S.G. Yoon, K.J. Choi, S.O. Ryu, S.M. Yoon, N.Y. Lee, B.G. Y u J. Vac. Sci. Technol., B 24, 721 (2006).
29. S.-J. Choi, J.-H. Lee, H.-J. Bae, W.-Y. Yang, T.-W. Kim, K.-H. Kim, IEEE Electron Device Lett. 30, 120 (2009).
30. R. Pandian, B.J. Kooi, G. Palasantzas, J.T.M. De Hosson, A. Pauza, Appl. Phys. Lett. 91, 152103 (2007).
31. I. Stratan, D. Tsiulyanu, I. Eisele, J. Optoelectron. Adv. Mater. 8, 2117 (2006).
32. P. van der Sluis, Appl. Phys. Lett. 82, 4089 (2003).
33. Z. Wang, P.B. Griffin, J. McVittie, S. Wong, P.C. McIntyre, Y. Nishi, IEEE Electron Device Lett. 28, 14 (2007).
34. N. Banno, T. Sakamoto, T. Hasegawa, K. Terabe, M. Aono, Jpn. J. Appl. Phys. 45, 3666 (2006).
35. S.-W. Kim, Y. Nishi, Proc. Non-Volatile Memory Tech. Symp. 75 (2007).
36. T. Sakamoto, N. Banno, N. Iguchi, H. Kawaura, H. Sunamura, S. Fujieda, K. Terabe, T. Hasegawa, M. Aono, Symp. VLSI Tech. Dig. Tech. 38 (2007).
37. S. Kaeriyama, T. Sakamoto, H. Sunamura, M. Mizuno, H. Kawaura, T. Hasegawa, K. Terabe, T. Nakayama, M. Aono, IEEE J. Solid-State Circuits 40, 168 (2005).
38. T. Sakamoto, N. Banno, N. Iguchi, H. Kawaura, H. Sunamura, S. Fujieda, K. Terabe, T. Hasegawa, M. Aono, Symp. VLSI Tech. Dig. Tech. 38 (2007).
39. T. Sakamoto, K. Lister, N. Banno, T. Hasegawa, K. Terabe, M. Aono, Appl. Phys. Lett. 91, 092110 (2007).
40. N. Banno, T. Sakamoto, S. Fujieda, M. Aono, Fourth Annu. Int. Reliab. Symp. 707 (2008).
41. Y. Tsuji, T. Sakamoto, N. Banno, H. Hada, M. Aono, Appl. Phys. Lett. 96, 023504 (2010).
42. S. Manhart, J. Phys. D 6, 82 (1973).
43. C. Schindler, S.C.P. Thermadam, R. Waser, M.N. Kozicki, IEEE Trans. Electron Devices 54, 2762 (2007).
44. M. Balakrishnan, S.C.P. Thermadam, M. Mitkova, M.N. Kozicki, 2006 Proc. Non-Volatile Memory Tech. Symp. 104 (2006).
45. C. Schindler, M. Weides, M.N. Kozicki, R. Waser, Appl. Phys. Lett. 92, 122910 (2008).
46. M.N. Kozicki, C. Gopalan, M. Balakrishnan, M. Mitkova, IEEE Trans. Nanotechnol. 5, 535 (2006).
47. K. Abe, M.P. Tendulkar, J.R. Jameson, P.B. Griffin, K. Nomura, S. Fujita, Y. Nishi, Proc. Int. Conf. IC Design Tech. 203 (2008).
48. K. Tsunoda, Y. Fukuzumi, J.R. Jameson, Z. Wang, P.B. Griffin, Y. Nishi, Appl. Phys. Lett. 90, 113501 (2007).
49. Y.T. Li, S.B. Long, M.H. Zhang, Q. Liu, L.B. Shao, S. Zhang, Y. Wang, Q.Y. Zuo, S. Liu, M. Liu, IEEE Electron Device Lett. 31, 117 (2010).
50. M. Meier, C. Schindler, S. Gilles, R. Rosezin, A. Rudiger, C. Kugeler, R. Waser, IEEE Electron Device Lett. 30, 8 (2009).
51. C. Kuegeler, C. Nauenheim, M. Meier, A. Ruediger, R. Waser, Proc. NonVolatile Memory Tech. Symp. 59 (2008).
52. K. Aratani, K. Ohba, T. Mizuguchi, S. Yasuda, T. Shiimoto, T. Tsushima T. Sone, K. Endo, A. Kouchiyama, S. Sasaki, A. Maesaka, N. Yamada H. Narisawa, IEDM Tech. Dig. 2007783 (2007).
53. S.H. Jo, K.H. Kim, W. Lu, Nano Lett. 9, 870 (2009)
54. S.H. Jo, W. Lu, Nano Lett. 8, 392 (2008).
55. K.H. Kim, S.H. Jo, S. Gaba, W. Lu, Appl. Phys. Lett. 96, 053106 (2010)
56. A.J. Snell, P.G. Lecomber, J. Hajto, M.J. Rose, A.E. Owen, I.S. Osborne J. Non-Cryst. Solids137, 1257 (1991).
57. R. Soni, M. Meier, A. Ruediger, B. Hollaender, C. Kuegeler, R. Waser, Microelectron. Eng.86, 1054(2009).
58. S.Z. Rahaman, S. Maikap, Proc. IEEE Int. Memory Workshop 70 (2010).
59. J. Yi, S.W. Kim, Y. Nishi, YT. Hwang, S.W. Chung, S.J. Hong, S.W. Park, Proc. Non-Volatile Memory Technology Symp. 32 (2008).
60. W.C. West, K. Sieradzki, B. Kardynal, M.N. Kozicki, J. Electrochem. Soc. 145, 2971 (1998).
61. M.N. Kozicki, W.C. West, U.S. Patent No. 5,761,115 (1998).
62. A. Chen, 2008 Proc. Non-Volatile Memory Tech. Symp. 27 (2008).
63. S. Dietrich, M. Angerbauer, M. Ivanov, D. Gogl, H. Hoenigschmid, M. Kund C. Liaw, M. Markert, R. Symanczyk, L. Altimime, S. Bournat, G. Mueller, IEEE J. Solid-State Circuits42, 839 (2007).
64. S.H. Jo, K.H. Kim, W. Lu, Nano Lett. 9, 496 (2009).
65. K. Terabe, T. Hasegawa, T. Nakayama, M. Aono, Nature433, 47 (2005).
66. J.R. Jameson, N. Gilbert, F. Koushan, J. Saenz, J. Wang, S. Hollmer M.N. Kozicki, Appl. Phys. Lett. 99, 063506 (2011).
67. C. Schindler, I. Valov, R. Waser, Phys. Chem. Chem. Phys. 11, 5974 (2009)
68. M.J. Lee, S. Seo, D.C. Kim, S.E. Ahn, D.H. Seo, I.K. Yoo, I.G. Baek, D.S. Kim, I.S. Byun, S.H. Kim, I.R. Hwang, J.S. Kim, S.H. Jeon, B.H. Park, Adv. Mater19, 73 (2007).
69. S.E. Ahn, B.S. Kang, K.H. Kim, M.J. Lee, C.B. Lee, G. Stefanovich, C.J. Kim, Y Park, IEEE Electron Device Lett. 30, 550 (2009).
70. B. Cho, T.-W. Kim, S. Song, Y. Ji, M. Jo, H. Hwang, G.-Y Jung, T. Lee, Adv. Mater.22, 1228 (2010).
71. W.Y Park, G.H. Kim, J.Y Seok, K.M. Kim, S.J. Song, M.H. Lee, C.S. Hwang Nanotechnology 21 (2010).
72. S. Puthentheradam, D. Schroder, M. Kozicki, Appl. Phys. A102, 817 (2011)
73. E. Linn, R. Rosezin, C. Kugeler, R. Waser, Nat. Mater. 9, 403 (2010).
74. R. Rosezin, E. Linn, L. Nielen, C. Kuegeler, R. Bruchhaus, R. Waser, IEEE Electron Device Lett. 32, 191 (2011).
75. www.emrl.de/pu-crs.htm#crs-model.
76. W. Wang, A. Gibby, Z. Wang, T.W. Chen, S. Fujita, P. Griffin, Y. Nishi S. Wong, IEDM Tech. Dig. 2006539 (2006).
77. D.B. Strukov, K.K. Likharev, Nanotechnology16, 888 (2005).
78. B. Swaroop, W.C. West, G. Martinez, M.N. Kozicki, L.A. Akers, Proc. Int. Symp. Circuits and Systems3, 33 (1998).
79. S.H. Jo, T. Chang, I. Ebong, B.B. Bhadviya, P. Mazumder, W. Lu, Nano Lett. 10, 1297 (2010).
80. T. Ohno, T. Hasegawa, T. Tsuruoka, K. Terabe, J.K. Gimzewski, M. Aono, Nat. Mater. 10, 591 (2011).