Device and IC characterization above 100 GHz

IEEE Microwave Magazine

Volumn 13, Issue 1, 2012, Pages 30-54

  Yau, Kenneth H K ^a   Dacquay, Eric ^a   Sarkas, Ioannis ^a   Voinigescu, Sorin P ^a  

^a UNIVERSITY OF TORONTO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

100 GHZ; ACTIVE AND PASSIVE DEVICE; AGGRESSIVE SCALING; COMPACT MODEL; DESIGN ITERATION; METAL-OXIDE; MOSFETS; PASSIVE DEVICES; S-PARAMETER CHARACTERIZATION; SEMICONDUCTOR FOUNDRIES; SIGE HETEROJUNCTION BIPOLAR TRANSISTOR; SILICON GERMANIUM; SILICON-BASED CIRCUITS;

GERMANIUM; HETEROJUNCTIONS; SCATTERING PARAMETERS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; TRANSISTORS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 84856354752     PISSN: 15273342     EISSN: None     Source Type: Trade Journal    
DOI: 10.1109/MMM.2011.2173869     Document Type: Article

References (43)

1. R. A. Bailey, M. A. Ussery, and P. J. Vail, "A neutron hardness assurance screen based on high-frequency probe measurements," IEEE Trans. Nuclear Sci., vol. 23, no. 6, pp. 2020-2026, Dec. 1976.
2. P. J. van Wijnen, H. R. Claessen, and E. A. Wolsheimer, "A new straightforward calibration and correction procedure for 'on wafer' high frequency S-parameter measurements (45 MHz-18 GHz)," in Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 1987, Minneapolis, MN.
3. F. Gianesello, D. Gloria, S. Montusclat, C. Raynaud, S. Boret, C. Clement, G. Dambrine, S. Lepilliet, F. Saguin, P. Scheer, P. Benech, and J. M. Fournier, "65 nm RFCMOS technologies with bulk and HR SOI substrate for millimeter wave passives and circuits characterized up to 220 GHz," in Proc. Int. Symp. IEEE Microwave Theory and Techniques, IMS June 2006, pp. 1927-1930. (Pubitemid 46924650)
4. N. Waldorf, "Characterisations et modelisations des technologies CMOS et BiCMOS de dernieres generations jusque 220 GHz," Ph. D. dissertation, Lille, France: L'Universite De Lille 1-Sciences et Technologies, Dec. 2009.
5. M. Seo, B. Jagannathan, J. Pekarik, and M. J. W. Rodwell, "A 150 GHz amplifier with 8 dB gain and +6 dBm Psat in digital 65 nm CMOS using dummy-prefilled microstrip lines," IEEE J. Solid-State Circuits, vol. 44, no. 12, pp. 3410-3421, Dec. 2009.
6. E. Laskin, M. Khanpour, S. T. Nicolson, A. Tomkins, P. Garcia, A. Cathelin, D. Belot, and S. P. Voinigescu, "Nanoscale CMOS transceiver design in the 90-170-GHz range," IEEE Trans. Microwave Theory Tech., vol. 57, no. 12, pp. 3477-3490, Dec. 2009.
7. K. H. K. Yau, I. Sarkas, A. Tomkins, P. Chevalier, and S. P. Voinigescu, "On-wafer S-parameter de-embedding of silicon active and passive devices up to 170 GHz," in IEEE MTT-S Int. Microwave Symp. Dig., Anaheim, CA, May 2010, pp. 600-603.
8. A. Davidson, K. Jones, and E. Strid, "LRM and LRRM calibrations with automatic determination of LOAD inductance," in 36th ARFTG Conf. Dig.-Fall, Nov. 1990, vol. 18, pp. 57-63.
9. G. F. Engen and C. A. Hoer, "Thru-reflect-line: An improved technique for calibrating the dual six-port automatic network analyzer," IEEE Trans. Microwave Theory Tech., vol. 27, no. 12, pp. 987-993, Dec. 1979.
10. R. B. Marks, "A multiline method of network analyzer calibration," IEEE Trans. Microwave Theory Tech., vol. 39, pp. 1205-1215, July 1991.
11. M. Koolen, J. Geelen, and M. Versleijen, "A n improved de-embedding technique for on-wafer high-frequency characterization," in Proc. 1991 Bipolar Circuits and Technology Meeting, pp. 188-191.
12. A. Mangan, "Millimetre-wave device characterization for nano-CMOS IC design," master's thesis, Toronto, Canada: Univ. of Toronto, 2005.
13. T. E. Kolding, "A four-step method for de-embedding gigahertz on-wafer CMOS measurements," IEEE Trans. Electron Devices, vol. 47, pp. 734-740, Apr. 2000. (Pubitemid 30588102)
14. L. F. Tiemeijer, R. M. T. Pijper, J. A. van Steenwijk, and E. van der Heijden, "A new 12-term OPEN-SHORT-LOAD de-embedding method for accurate on-wafer characterization of RF MOSFET structures," IEEE Trans. Microwave Theory Tech., vol. 58, pp. 419-433, Feb. 2010.
15. A. M. Mangan, S. P. Voinigescu, M.-T. Yang, and M. Tazlauanu, "De-embedding transmission line measurements for accurate modeling of IC designs," IEEE Trans. Electron Devices, vol. 53, no. 2, pp. 235-241, Feb. 2006. (Pubitemid 43174037)
16. M.-H. Cho, G.-W. Huang, Y.-H. Wang, and L.-K. Wu, "A scalable noise de-embedding technique for on-wafer microwave device characterization," IEEE Microwave Wireless Comp. Lett., vol. 15, pp. 649-651, Oct. 2005. (Pubitemid 41495090)
17. K. H. K. Yau, A. M. Mangan, P. Chevalier, P. Schvan, and S. P. Voinigescu, "A transmission-line based technique for de-embedding noise parameters," in Proc. IEEE Int. Conf. Microelectronic Test Structures, Mar. 2007, pp. 237-242. (Pubitemid 47448418)
18. Q. Liang, J. D. Cressler, G. Niu, Y. Lu, G. Freeman, D. C. Ahlgren, R. M. Malladi, K. Newton, and D. L. Harame, "A simple four-port parasitic deembedding methodology for high-frequency scattering parameter and noise characterization of SiGe HBTs," IEEE Trans. Microwave Theory Tech., vol. 51, no. 11, pp. 2165-2174, Nov. 2003.
19. A. Rumiantsev, P. Sakalas, F. Pourchon, P. Chevalier, N. Derrier, and M. Schroter, "Application of on-wafer calibration techniques for advanced high-speed BiCMOS technology," in Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), Oct. 4-6, 2010, pp. 98-101.
20. D. F. Williams and R. B. Marks, "Transmission line capacitance measurement," IEEE Microwave Guided Wave Lett., vol. 1, no. 9, pp. 243-245, Sept. 1991.
21. R. B. Marks and D. F. Williams, "Characteristic impedance determination using propagation constant measurement," IEEE Microwave Guided Wave Lett., vol. 1, pp. 141-143, June 1991.
22. G. Avenier, M. Diop, P. Chevalier, G. Troillard, B. Vandelle, F. Brossard, L. Depoyan, M. Buczko, C. Leyris, S. Boret, S. Montusclat, A. Margain, S. Pruvost, S. T. Nicolson, K. H. K. Yau, N. Revil, D. Gloria, D. Dutartre, S. P. Voinigescu, and A. Chantre, "0.13 μm SiGe BiCMOS technology for mm-wave applications," IEEE J. Solid-State Circuits, vol. 44, pp. 2312-2321, Sept. 2009.
23. W. Deal, K. Leong, X. B. Mei, S. Sarkozy, V. Radisic, J. Lee, P. H. Liu, W. Yoshida, J. Zhou, and M. Lange, "Scaling of InP HEMT cascode integrated circuits to THz frequencies," in IEEE CSICS Dig., Oct. 2010, pp. 195-198.
24. J.-O. Plouchart, "Applications of SOI technologies to communication," in IEEE CSICS Tech. Dig., pp. 47-50, Oct. 2011.
25. O. Inac, B. Certinoneri, M. Uzunkol, T. Y. A. Atesal, and G. Rebeiz, "Millimeter-wave and THz circuits in 45-nm SOI CMOS," in IEEE CSICS Tech. Dig., pp. 15-18, Oct. 2011.
26. T. Yao, M. Q. Gordon, K. K. W. Tang, K. H. K. Yau, M.-T. Yang, P. Schvan, and S. P. Voinigescu, "Algorithmic design of CMOS LNAs and PAs for 60-GHz radio," IEEE J. Solid State Circuits, vol. 42, no. 5, pp. 1044-1057, May 2007.
27. H. Stubing and H.-M. Rein, "A compact physical large-signal model for high-speed bipolar transistors at high current densities-Part I: One-dimensional model," IEEE Trans. Electron Devices, vol. ED-34, pp. 1741-1751, Aug. 1987. (Pubitemid 17631813)
28. H.-M. Rein and M. Schroter, "A compact physical large-signal model for high-speed bipolar transistors at high current densities-Part II: Two-dimensional model and experimental results," IEEE Trans. Electron Devices, vol. ED-34, pp. 1752-1761, Aug. 1987. (Pubitemid 17631812)
29. S. P. Voinigescu, M. Tazlauanu, P. C. Ho, and M. T. Yang, "Direct extraction methodology for geometry-scalable RF-CMOS models," in Proc. IEEE Int. Conf. Microelectronic Test Struct., Mar. 2004, vol. 17, pp. 235-240.
30. S. P. Voinigescu, M. C. Maliepaard, J. L. Showell, G. E. Babcock, D. Marchesan, M. Schroter, P. Schvan, and D. L. Harame, "A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design," IEEE J. Solid-State Circuits, vol. 32, no. 9, pp. 1430-1438, Sept. 1997. (Pubitemid 127566425)
31. K. H. K. Yau, P. Chevalier, A. Chantre, and S. P. Voinigescu, "Characterization of the noise parameters of SiGe HBTs in the 70-170 GHz range," IEEE Trans. Microwave Theory Tech., vol. 59, pp. 1983-2000, Aug. 2011.
32. M. W. Pospieszalski, "Interpreting transistor noise," IEEE Microwave Mag., vol. 11, no. 6, pp. 61-69, Oct. 2010.
33. B. A. Floyd, D. R. Greenberg, R. M. Malladi, B. A. Orner, and S. K. Reynolds, "Radio frequency integrated circuit with onchip noise source for self-test," U. S. Patent 0 190 640 A1, July 20, 2009.
34. H. Knapp, T. F. Meister, W. Liebl, D. Claeys, T. Popp, K. Aufinger, H. Sch, S. Boguth, and R. Lachner, "Static frequency dividers up to 125 GHz in SiGe: C bipolar technology," in IEEE BCTM Dig., Oct. 2010.
35. Z. Griffith, M. Urteaga, R. Pierson, P. Rowell, M. Rodwell, and B. Brar, "A 204.8 GHz static divide-by-8 frequency divider in 250 nm InP HBT," in IEEE CSICS Dig., Oct. 2010, pp. 53-56.
36. E. Laskin, P. Chevalier, B. Sautreuil, and S. P. Voinigescu, "A 140-GHz double-sideband transceiver with amplitude and frequency modulation operating over a few meters," in IEEE BCTM Dig., Oct. 2009, pp. 178-181.
37. V. Radisic, K. M. K. H. Leong, S. Sarkozy, X. Mei, W. Yoshida, P.-H. Liu, and R. Lai, "A 75 mW 210 GHz power amplifier module," in IEEE CSICS Dig., Oct. 2011, pp. 211-214.
38. T. B. Reed, M. J. W. Rodwell, Z. Griffith, P. Rowell, M. Urteaga, M. Field, J. Hacker, "48.8 mW multi-cell InP HBT amplifier with on wafer power combining at 220 GHz," in IEEE CSICS Dig., Oct. 2011, pp. 223-226.
39. S. P. Voinigescu, R. Aroca, T. O. Dickson, S. T. Nicolson, T. Chalvatzis, P. Chevalier, P. Garcia, C. Garnier, and B. Sautreuil, "Towards a sub-2.5V, 100-Gb/s serial transceiver," in Proc. IEEE CICC, Sept. 2007, pp. 471-478. (Pubitemid 351277028)
40. R. Agethen and D. Kissinger, "Built-in test architectures for zero-IF automotive radar receivers," in Proc. Workshop Automotive Radar Sensors in the 76-81 GHz Frequency Range, EuRAD (European Microwave Week), Paris, Oct. 1, 2010.
41. Sarkas, J. Hasch, A. Balteanu, and S. Voinigescu, "A fundamental frequency, single-chip 120-GHz SiGe BiCMOS precision distance sensor with above IC antenna operating over several meters," IEEE Trans. Microwave Theory Tech., Jan. 2012.
42. E. Laskin, A. Tomkins, A. Balteanu, I. Sarkas, and S. P. Voinigescu, "A 60-GHz RF IQ DAC transceiver with on-die at-speed loopback," in IEEE RFIC Symp. Dig., June 2011, pp. 1-4.
43. B. Laemmle, K. Schmalz, C. Scheytt, D. Kissinger, and R. Weigel, "A 122-GHz multiprobe reflectometer for dielectric sensor readout in SiGe BiCMOS technology," in IEEE CSICS Dig., Oct. 2011, pp. 255-258.