0.13 μ m SiGe BiCMOS technology fully dedicated to mm-wave applications

IEEE Journal of Solid-State Circuits

Volumn 44, Issue 9, 2009, Pages 2312-2321

  Avenier, Grégory ^a   Diop, Malick ^a   Chevalier, Pascal ^a   Troillard, Germaine ^a   Loubet, Nicolas ^a   Bouvier, Julien ^a   Depoyan, Linda ^a   Derrier, Nicolas ^a   Buczko, Michel ^a   Leyris, Cédric ^a   Boret, Samuel ^a   Montusclat, Sébastien ^a   Margain, Alain ^a   Pruvost, Sébastien ^a   Nicolson, Sean T ^b   Yau, Kenneth H K ^b   Revil, Nathalie ^a   Gloria, Daniel ^a   Dutartre, Didier ^a   Voinigescu, Sorin P ^b   Chantre, Alain ^a   more..

^a STMICROELECTRONICS   (France)

^b UNIVERSITY OF TORONTO   (Canada)

Author keywords

BiCMOS integrated circuits technology; Heterojunction bipolar transistor (HBT); Integrated circuit fabrication; Millimeter wave technology; Silicon Germanium (SiGe)

Indexed keywords

BICMOS INTEGRATED CIRCUITS TECHNOLOGY; HETEROJUNCTION BIPOLAR TRANSISTOR (HBT); INTEGRATED CIRCUIT FABRICATION; MILLIMETER WAVE TECHNOLOGY; SILICON GERMANIUM (SIGE);

BIPOLAR TRANSISTORS; COPPER OXIDES; GERMANIUM; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; INTEGRATED CIRCUITS; MILLIMETER WAVE DEVICES; MILLIMETER WAVES; MIM DEVICES; MOS DEVICES; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; SILICON ALLOYS; TECHNOLOGY; TRANSISTOR TRANSISTOR LOGIC CIRCUITS;

BICMOS TECHNOLOGY;

EID: 70249143924     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2009.2024102     Document Type: Article

References (20)

1. T/i\iAx 0.13/L(mSiGe: CBiCMOStechnology," in Proc. BCTM, Oct. 2003, pp. 199-202.
2. S. Pruvost et al, "Low noise low cost Rx solutions for pulsed 24 GHz automotive radar sensors," in RFIC Symp. Dig., Jun. 2007, pp. 387-390.
3. B. A. Orner etal, "A BiCMOS technology featuring a 300/330 GHz (IT/fmax) SiGe HBT for millimeter wave applications," in Proc. BCTM, Oct. 2006, pp. 49-52.
4. H. Rücker et al, "SiGe BiCMOS technology with 3.0 ps gate delay," in IEDM Tech. Dig., Dec. 2007, pp. 651-654.
5. G. Avenier et al, "0.13 fm SiGe BiCMOS technology for mm-wave applications," in Proc. BCTM, Oct. 2008, pp. 89-92.
6. P. Chevalier et al, "High-speed SiGe BiCMOS technologies: 120-nm status and end-of-roadmap challenges," in Proc. SiRF, Jan. 2007, pp. 18-24.
7. max self-aligned SiGeC HBT optimized towards CMOS compatibility," in Proc. BCTM, Oct. 2005, pp. 120-123.
8. M. Diop et al., "Impact of inside spacer process on fully self-aligned 250 GHz SiGe:C HBTs' reliability performances: a-Si vs. nitride," Microelectron. Reliabil., vol. 48, no. 8-9, pp. 1198-1201, Aug.-Sep. 2008.
9. J. D. Burnett and C. Hu, "Modeling hot-carriers effects in polysilicon emitter bipolar transistors," IEEE Trans. Electron Devices, vol. 35, no. 12, pp. 2238-2244, Dec. 1988.
10. H. A. W. Markus et al., "Low-frequency noise in polysilicon emitter bipolar transistors," IEEE Trans. Electron Devices, vol. 42, no. 4, pp. 720-727, Apr. 1995.
11. K. Washio etal., "DC and low-frequency-noise characterization of epi-taxially grown raised-emitter SiGe HBTs," Thin Solid Films, vol. 517, no. 1, pp. 6-9, Nov. 2008.
12. F. Pourchon et al., "From measurements to intrinsic device characteristics: Test structures and parasitic determination," in Proc. BCTM, Oct. 2008, pp. 232-239.
13. S. P. Voinigescu et al., "A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design," IEEE J. Solid-State Circuits, vol. 32, no. 9, pp. 1430-1439, Sep. 1997.
14. C. Lee, T. Yao, A. Mangan, K. Yau, M. A. Copeland, and S. P. Voinigescu, "SiGe BiCMOS 65-GHz BPSK transmitter and 30 to 122 GHz LC-varactor VCOs with up to 21% tuning range," in IEEE Compound Semiconductor Integrated Circuits Symp. Tech. Dig., Monterey, CA, Oct. 2004, pp. 179-182.
15. S. P. Voinigescu, R. Aroca, K. Tang, S. Nicolson, E. Laskin, M. Khan-pour, K. Yau, A. Tomkins, T. Chalvatzis, T. O. Dickson, and A. Hart, "Why Moore's law and scaling work for mm-wave VCOs and PLLs,"in Workshop on Advanced PLL Architectures for Embedded SoCs, RFIC Symp., Jun. 2008.
16. R. A. Aroca, A. Tomkins, Y. Doi, T. Yamamoto, and S. P. Voinigescu, "Circuit performance characterization of digital 45-nm CMOS technology for applications around 110 GHz," in VLSI Circuits Symp. Dig., Honolulu, Hawaii, Jun. 2008, pp. 162-163.
17. K. Scheier, G. Vandersteen, Y. Rolain, and P. Wambacq, "A 57-to-66 GHz quadrature PLL in 45 nm digital CMOS," in IEEE ISSCC Dig., Feb. 2009, pp. 494-495.
18. S. T. Nicolson etal, "A low voltage SiGe BiCMOS 77-GHz automotive radar chipset," IEEE Trans. Microw. Theory Tech., vol. 56, no. 5, pp. 1092-1104, May 2008.
19. M. Khanpour et al., "A wideband W-band receiver front-end in 65-nm CMOS," in J. Solid-State Circuits, submitted for publication.
20. I. Sarkaso et al, "W-band 65-nm CMOS and SiGe BiCMOS transmitter and receiver with lumped I-Q phase shifters," in RFIC 2009, submitted for publication