-
1
-
-
84937741249
-
Theory of noisy fourpoles
-
June
-
H. Rothe and W. Dahlke, "Theory of noisy fourpoles," Proc. IRE, vol.44, pp. 811-818, June 1956.
-
(1956)
Proc. IRE
, vol.44
, pp. 811-818
-
-
Rothe, H.1
Dahlke, W.2
-
2
-
-
0016947365
-
An efficient method for computer aided noise analysis of linear amplifier networks
-
June
-
H. Hildebrand and P. Russer, "An efficient method for computer aided noise analysis of linear amplifier networks," IEEE Trans. Circuits Syst., vol.CAS-23, pp. 235-238, June 1976;
-
(1976)
IEEE Trans. Circuits Syst.
, vol.CAS-23
, pp. 235-238
-
-
Hildebrand, H.1
Russer, P.2
-
3
-
-
77956608831
-
-
Nov.
-
Erratum in vol. CAS-23, p. 691, Nov. 1976.
-
(1976)
Erratum
, vol.CAS-23
, pp. 691
-
-
-
5
-
-
2542423501
-
Noise characterization of linear two-ports in terms of invariant parameters
-
June
-
J. Lange, "Noise characterization of linear two-ports in terms of invariant parameters," IEEE J. Solid-State Circuits, vol.SC-2, pp. 37-40, June 1967.
-
(1967)
IEEE J. Solid-State Circuits
, vol.SC-2
, pp. 37-40
-
-
Lange, J.1
-
6
-
-
0022582648
-
Comment on 'Design of microwave GaAs MESFET's for broadband, low-noise amplifiers'
-
Jan.
-
M. W. Pospieszalski and W. Wiatr, "Comment on 'Design of microwave GaAs MESFET's for broadband, low-noise amplifiers'," IEEE Trans. Microwave Theory Tech., vol.MTT-34, p. 194, Jan. 1986.
-
(1986)
IEEE Trans. Microwave Theory Tech.
, vol.MTT-34
, pp. 194
-
-
Pospieszalski, M.W.1
Wiatr, W.2
-
7
-
-
0024738288
-
Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependence
-
Sept.
-
M. W. Pospieszalski, "Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependence," IEEE Trans. Microwave Theory Tech., vol.MTT-37, pp. 1340-1350, Sept. 1989.
-
(1989)
IEEE Trans. Microwave Theory Tech.
, vol.MTT-37
, pp. 1340-1350
-
-
Pospieszalski, M.W.1
-
8
-
-
27344456204
-
Extremely low-noise amplification with cryogenic FETs and HFETs: 1970-2004
-
Sept.
-
M. W. Pospieszalski, "Extremely low-noise amplification with cryogenic FETs and HFETs: 1970-2004," Microwave Mag., vol.6, no.3, pp. 62-75, Sept. 2005.
-
(2005)
Microwave Mag.
, vol.6
, Issue.3
, pp. 62-75
-
-
Pospieszalski, M.W.1
-
9
-
-
41849150795
-
On certain noise properties of field-effect and bipolar transistors
-
Krakow, Poland, May 22-24
-
M. W. Pospieszalski, "On certain noise properties of field-effect and bipolar transistors," in Proc. Microwaves, Radar and Wireless Communications (MIKON) 2006 Conf., Krakow, Poland, May 22-24, 2006, vol.3, pp. 1127-1130.
-
(2006)
Proc. Microwaves, Radar and Wireless Communications (MIKON) 2006 Conf.
, vol.3
, pp. 1127-1130
-
-
Pospieszalski, M.W.1
-
10
-
-
0003038536
-
Optimal noise performance of linear amplifiers
-
Apr.
-
H. A. Haus and R. B. Adler, "Optimal noise performance of linear amplifiers," Proc. IRE, vol.46, pp. 1517-1533, Apr. 1976.
-
(1976)
Proc. IRE
, vol.46
, pp. 1517-1533
-
-
Haus, H.A.1
Adler, R.B.2
-
11
-
-
0029306263
-
Influence of the gate leakage current on the noise performance of MESFETs and MODFETs
-
F. Danneville, G. Dambrine, H. Happy, P. Tadyszak, and A. Cappy, "Influence of the gate leakage current on the noise performance of MESFETs and MODFETs," Solid State Electron., vol.38, no.5, pp. 1081-1087, 1995.
-
(1995)
Solid State Electron.
, vol.38
, Issue.5
, pp. 1081-1087
-
-
Danneville, F.1
Dambrine, G.2
Happy, H.3
Tadyszak, P.4
Cappy, A.5
-
12
-
-
4444302438
-
Influence of the gate leakage current and the gate resistance on the noise and gain performances of 90-nm CMOS for micro- and millimeterwave frequencies
-
Dallas, TX, June
-
H. O. Vickes, M. Ferndahl, A. Masud, and H. Zirtah, "Influence of the gate leakage current and the gate resistance on the noise and gain performances of 90-nm CMOS for micro- and millimeterwave frequencies," in 2004 IEEE MTT-S Int. Microwave Symp. Dig., Dallas, TX, June 2004, pp. 971-974.
-
(2004)
2004 IEEE MTT-S Int. Microwave Symp. Dig.
, pp. 971-974
-
-
Vickes, H.O.1
Ferndahl, M.2
Masud, A.3
Zirtah, H.4
-
13
-
-
41549125006
-
CMOS large signal and RF noise model for CAD
-
Manchester, U.K., Sept.
-
I. Angelov, M. Ferndahl, F. Ingvarson, H. Zirath, and H. O. Vickes, "CMOS large signal and RF noise model for CAD," in Proc. 2006 European Microwave Integrated Circuits Conf., Manchester, U.K., Sept. 2006, pp. 217-220.
-
(2006)
Proc. 2006 European Microwave Integrated Circuits Conf.
, pp. 217-220
-
-
Angelov, I.1
Ferndahl, M.2
Ingvarson, F.3
Zirath, H.4
Vickes, H.O.5
-
14
-
-
0031169958
-
Investigation and modeling of impact ionization with regard to the RF- and noise behavior of HFET
-
June
-
R. Reuter, M. Agethen, U. Auer, S. van Waasen, D. Peters, W. Brockerhoff, and F. J. Tegude, "Investigation and modeling of impact ionization with regard to the RF- and noise behavior of HFET," IEEE Trans. Microwave Theory Tech., vol.MTT-45, pp. 977-983, June 1997.
-
(1997)
IEEE Trans. Microwave Theory Tech.
, vol.MTT-45
, pp. 977-983
-
-
Reuter, R.1
Agethen, M.2
Auer, U.3
Van Waasen, S.4
Peters, D.5
Brockerhoff, W.6
Tegude, F.J.7
-
15
-
-
0026826270
-
Improved noise model for MESFETs and HEMTs in lower gigahertz frequency range
-
Mar.
-
P. Heynman and H. Prinzler, "Improved noise model for MESFETs and HEMTs in lower gigahertz frequency range," Electron. Lett., vol.28, no.7, pp. 611-612, Mar. 1992.
-
(1992)
Electron. Lett.
, vol.28
, Issue.7
, pp. 611-612
-
-
Heynman, P.1
Prinzler, H.2
-
16
-
-
0027987575
-
Noise parameter modeling of HEMTs with resistor temperature noise sources
-
San Diego, CA, June
-
T. Felgentreff, G. Olbrich, and P. Russer, "Noise parameter modeling of HEMTs with resistor temperature noise sources," in 1994 IEEE MTT-S Int. Microwave Symp. Dig., San Diego, CA, June 1994, pp. 853-856.
-
(1994)
1994 IEEE MTT-S Int. Microwave Symp. Dig.
, pp. 853-856
-
-
Felgentreff, T.1
Olbrich, G.2
Russer, P.3
-
17
-
-
28444496697
-
High frequency noise of SOI MOSFETs: Performances and limitations
-
DOI 10.1117/12.609669, 21, Noise in Devices and Circuits III
-
F. Danneville, G. Pailloncy, A. Siligaris, B. Iniguez, and G. Dambrine, "High frequency noise in SOI MOSFETs: Performances and limitations," in Proc. SPIE Symp. Fluctuation and Noise, 2005, vol.5844, pp. 185-199. (Pubitemid 41736952)
-
(2005)
Proceedings of SPIE - The International Society for Optical Engineering
, vol.5844
, pp. 185-199
-
-
Danneville, F.1
Pailloncy, G.2
Siligaris, A.3
Iniguez, B.4
Dambrine, G.5
-
18
-
-
2942631080
-
Compact modeling of noise for RF CMOS circuit design
-
Apr.
-
A. J. Schloten, L. F. Tiemeier, R. van Langevelde, R. J. Havens, A. T. A. Zegers-van Duijnhoven, R. de Kort, and D. B. M. Klassen, "Compact modeling of noise for RF CMOS circuit design," IEE Proc. Circuits Devices Syst., vol.151, pp. 167-174, Apr. 2004.
-
(2004)
IEE Proc. Circuits Devices Syst.
, vol.151
, pp. 167-174
-
-
Schloten, A.J.1
Tiemeier, L.F.2
Van Langevelde, R.3
Havens, R.J.4
Zegers-Van Duijnhoven, A.T.A.5
De Kort, R.6
Klassen, D.B.M.7
-
19
-
-
33947111799
-
High-frequency noise of modern MOSFETs: Compact modeling and measurement issues
-
Sept.
-
M. J. Deen, C.-H. Chen, S. Asagaran, G. A. Rezvani, J. Thao, and Y. Kiyota, "High-frequency noise of modern MOSFETs: Compact modeling and measurement issues," IEEE Trans. Electron. Devices, vol.ED-53, pp. 2062-2081, Sept. 2006.
-
(2006)
IEEE Trans. Electron. Devices
, vol.ED-53
, pp. 2062-2081
-
-
Deen, M.J.1
Chen, C.-H.2
Asagaran, S.3
Rezvani, G.A.4
Thao, J.5
Kiyota, Y.6
-
20
-
-
0036687560
-
Small signal and temperature noise model for MOSFETs
-
Aug.
-
A. Pascht, M. Grozing, D. Wiegener, and M. Berroth, "Small signal and temperature noise model for MOSFETs," IEEE Trans. Microwave Theory Tech., vol.MTT-50, pp. 1927-1933, Aug. 2002.
-
(2002)
IEEE Trans. Microwave Theory Tech.
, vol.MTT-50
, pp. 1927-1933
-
-
Pascht, A.1
Grozing, M.2
Wiegener, D.3
Berroth, M.4
-
21
-
-
64749103289
-
Scalable small signal and noise modeling for deep submicron MOSFETs
-
Apr.
-
J. Gao and A. Werthof, "Scalable small signal and noise modeling for deep submicron MOSFETs," IEEE Trans. Microwave Theory Tech., vol.MTT-57, pp. 737-744, Apr. 2009.
-
(2009)
IEEE Trans. Microwave Theory Tech.
, vol.MTT-57
, pp. 737-744
-
-
Gao, J.1
Werthof, A.2
-
22
-
-
0029306017
-
Noise modeling of microwave heterojunction bipolar transitors
-
May
-
L. Escotte, J. P. Roux, R. Plana, J. Graffeuiel, and A. Gruhle, "Noise modeling of microwave heterojunction bipolar transitors," IEEE Trans. Electron. Devices, vol.ED-42, pp. 883-889, May 1995.
-
(1995)
IEEE Trans. Electron. Devices
, vol.ED-42
, pp. 883-889
-
-
Escotte, L.1
Roux, J.P.2
Plana, R.3
Graffeuiel, J.4
Gruhle, A.5
-
23
-
-
0031236647
-
A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design
-
Sept.
-
S. P. Voinigescu, M. C. Maliepaard, J. L. Showell, G. E. Babcock, D. Marchesan, M. Schroter, P. Schvan, and D. L. Harame, "A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design," IEEE J. Solid State Circuits, vol.SSC-32, pp. 1430-1439, Sept. 1997.
-
(1997)
IEEE J. Solid State Circuits
, vol.SSC-32
, pp. 1430-1439
-
-
Voinigescu, S.P.1
Maliepaard, M.C.2
Showell, J.L.3
Babcock, G.E.4
Marchesan, D.5
Schroter, M.6
Schvan, P.7
Harame, D.L.8
-
24
-
-
24944498406
-
Noise in SiGe HBT RF technology: Physics, modeling and circuit implications
-
Sept.
-
G. Niu, "Noise in SiGe HBT RF technology: Physics, modeling and circuit implications," Proc. IEEE, vol.93, pp. 1583-1597, Sept. 2005.
-
(2005)
Proc. IEEE
, vol.93
, pp. 1583-1597
-
-
Niu, G.1
-
25
-
-
24944583056
-
Scaling of SiGe heterojunction bipolar transistors
-
Sept.
-
J. S. Rieh, D. Greenberg, A. Stricker, and G. Freeman, "Scaling of SiGe heterojunction bipolar transistors," Proc. IEEE, vol.93, pp. 1522-1538, Sept. 2005.
-
(2005)
Proc. IEEE
, vol.93
, pp. 1522-1538
-
-
Rieh, J.S.1
Greenberg, D.2
Stricker, A.3
Freeman, G.4
-
26
-
-
24944592650
-
Noise performance scaling in high-speed silicon RF technologies
-
Apr.
-
D. R. Greenberg, S. Sweeney, B. Jagannathan, G. Freeman, and D. Algren, "Noise performance scaling in high-speed silicon RF technologies," in Proc. 2003 Topical Meeting Monolithic Integrated Circuits in RF Systems, Apr. 2003, pp. 22-25.
-
(2003)
Proc. 2003 Topical Meeting Monolithic Integrated Circuits in RF Systems
, pp. 22-25
-
-
Greenberg, D.R.1
Sweeney, S.2
Jagannathan, B.3
Freeman, G.4
Algren, D.5
-
28
-
-
38149103204
-
Comparative study of shot noise models for HBTs
-
Munich, Geramny, Oct.
-
M. Rudolph and P. Heymann, "Comparative study of shot noise models for HBTs," in Proc. 2007 European Microwave Integrated Circuits Conf., Munich, Geramny, Oct. 2007, pp. 191-194.
-
(2007)
Proc. 2007 European Microwave Integrated Circuits Conf.
, pp. 191-194
-
-
Rudolph, M.1
Heymann, P.2
-
29
-
-
34748836389
-
On compact HBT RF noise modeling
-
Honolulu, HI, June
-
M. Rudolph and P. Heymann, "On compact HBT RF noise modeling," in 2007 IEEE MTT-S Int. Microwave Symp. Dig., Honolulu, HI, June 2007, pp. 1783-1786.
-
(2007)
2007 IEEE MTT-S Int. Microwave Symp. Dig.
, pp. 1783-1786
-
-
Rudolph, M.1
Heymann, P.2
-
30
-
-
38149052267
-
Compact large-signal shot noise models fro HBTs
-
Jan.
-
M. Rudolph, F. Korndorfer, P. Heymann, and W. Heinrich, "Compact large-signal shot noise models fro HBTs," IEEE Trans. Microwave Theory Tech., vol.MTT-56, pp. 7-14, Jan. 2008.
-
(2008)
IEEE Trans. Microwave Theory Tech.
, vol.MTT-56
, pp. 7-14
-
-
Rudolph, M.1
Korndorfer, F.2
Heymann, P.3
Heinrich, W.4
-
31
-
-
15844403472
-
Small signal and high-frequency noise modeling of SiGe HBTs
-
Mar.
-
U. Basaran, N. Wieser, G. Feiler, and M. Berroth, "Small signal and high-frequency noise modeling of SiGe HBTs," IEEE Trans. Microwave Theory Tech., vol.MTT-53, pp. 919-928, Mar. 2005.
-
(2005)
IEEE Trans. Microwave Theory Tech.
, vol.MTT-53
, pp. 919-928
-
-
Basaran, U.1
Wieser, N.2
Feiler, G.3
Berroth, M.4
-
32
-
-
36649028491
-
Design of cryogenic SiGe low-noise amplifiers
-
Nov.
-
S. Weinreb, J. C. Bardin, and H. Mani, "Design of cryogenic SiGe low-noise amplifiers," IEEE Trans. Microwave Theory Tech., vol.MTT-55, pp. 2306-2312, Nov. 2007.
-
(2007)
IEEE Trans. Microwave Theory Tech.
, vol.MTT-55
, pp. 2306-2312
-
-
Weinreb, S.1
Bardin, J.C.2
Mani, H.3
-
34
-
-
13444309599
-
Microwave and noise performance of SiGe BiCMOS HBT under cryogenic temperatures
-
Feb.
-
S. Pruvost, S. Delacourt, I. Telliiez, M. Laurens, N. Bourzgui, F. Danneville, A. Monroy, and G. Dambrine, "Microwave and noise performance of SiGe BiCMOS HBT under cryogenic temperatures," IEEE Electron. Device Lett., vol.26, pp. 105-108, Feb. 2005.
-
(2005)
IEEE Electron. Device Lett.
, vol.26
, pp. 105-108
-
-
Pruvost, S.1
Delacourt, S.2
Telliiez, I.3
Laurens, M.4
Bourzgui, N.5
Danneville, F.6
Monroy, A.7
Dambrine, G.8
-
35
-
-
0026367615
-
FET noise model and on-wafer measurement of noise parameters
-
Boston, MA, June
-
M. W. Pospieszalski and A. C. Niedzwiecki, "FET noise model and on-wafer measurement of noise parameters," in 1991 IEEE MTT-S Int. Microwave Symp. Dig., Boston, MA, June 1991, pp. 1117-1120.
-
(1991)
1991 IEEE MTT-S Int. Microwave Symp. Dig.
, pp. 1117-1120
-
-
Pospieszalski, M.W.1
Niedzwiecki, A.C.2
-
36
-
-
84870019459
-
-
"IT8001data sheet," GIGOPTIX Corp., Palo Alto, CA (part now discontinued)
-
"IT8001data sheet," GIGOPTIX Corp., Palo Alto, CA (part now discontinued).
-
-
-
-
37
-
-
84870039383
-
-
"NE32100 data sheet," NEC, California Eastern Lab., Santa Clara, CA
-
"NE32100 data sheet," NEC, California Eastern Lab., Santa Clara, CA.
-
-
-
-
38
-
-
84870019460
-
-
"FHX13X and FHR45X data sheets," Sumitomo Electric Device Innovations Inc., Yokohama, Japan
-
"FHX13X and FHR45X data sheets," Sumitomo Electric Device Innovations Inc., Yokohama, Japan.
-
-
-
-
39
-
-
84870001674
-
-
"ATF34143 and ATF51543 data sheets," Avago Technologies, San Jose, CA
-
"ATF34143 and ATF51543 data sheets," Avago Technologies, San Jose, CA.
-
-
-
-
40
-
-
84870039384
-
-
"NE3509M04 data sheet," NEC, California Eastern Lab., Santa Clara, CA
-
"NE3509M04 data sheet," NEC, California Eastern Lab., Santa Clara, CA.
-
-
-
-
41
-
-
84870019521
-
-
"VMMK1218 data sheet," Avago Technologies, San Jose, CA
-
"VMMK1218 data sheet," Avago Technologies, San Jose, CA.
-
-
-
-
42
-
-
84870001671
-
-
"MGF4953 data sheet," Mitsubishi Electric, Tokyo, Japan
-
"MGF4953 data sheet," Mitsubishi Electric, Tokyo, Japan.
-
-
-
|