메뉴 건너뛰기




Volumn 11, Issue 6, 2010, Pages 61-69

Interpreting transistor noise

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT DESIGNERS; ENGINEERING PRACTICES; FIELD EFFECTS; MEASURED DATA; NOISE MODELS; NOISE PARAMETERS; TRANSISTOR NOISE;

EID: 77956571573     PISSN: 15273342     EISSN: None     Source Type: Trade Journal    
DOI: 10.1109/MMM.2010.937733     Document Type: Conference Paper
Times cited : (50)

References (42)
  • 1
    • 84937741249 scopus 로고
    • Theory of noisy fourpoles
    • June
    • H. Rothe and W. Dahlke, "Theory of noisy fourpoles," Proc. IRE, vol.44, pp. 811-818, June 1956.
    • (1956) Proc. IRE , vol.44 , pp. 811-818
    • Rothe, H.1    Dahlke, W.2
  • 2
    • 0016947365 scopus 로고
    • An efficient method for computer aided noise analysis of linear amplifier networks
    • June
    • H. Hildebrand and P. Russer, "An efficient method for computer aided noise analysis of linear amplifier networks," IEEE Trans. Circuits Syst., vol.CAS-23, pp. 235-238, June 1976;
    • (1976) IEEE Trans. Circuits Syst. , vol.CAS-23 , pp. 235-238
    • Hildebrand, H.1    Russer, P.2
  • 3
    • 77956608831 scopus 로고
    • Nov.
    • Erratum in vol. CAS-23, p. 691, Nov. 1976.
    • (1976) Erratum , vol.CAS-23 , pp. 691
  • 5
    • 2542423501 scopus 로고
    • Noise characterization of linear two-ports in terms of invariant parameters
    • June
    • J. Lange, "Noise characterization of linear two-ports in terms of invariant parameters," IEEE J. Solid-State Circuits, vol.SC-2, pp. 37-40, June 1967.
    • (1967) IEEE J. Solid-State Circuits , vol.SC-2 , pp. 37-40
    • Lange, J.1
  • 6
    • 0022582648 scopus 로고
    • Comment on 'Design of microwave GaAs MESFET's for broadband, low-noise amplifiers'
    • Jan.
    • M. W. Pospieszalski and W. Wiatr, "Comment on 'Design of microwave GaAs MESFET's for broadband, low-noise amplifiers'," IEEE Trans. Microwave Theory Tech., vol.MTT-34, p. 194, Jan. 1986.
    • (1986) IEEE Trans. Microwave Theory Tech. , vol.MTT-34 , pp. 194
    • Pospieszalski, M.W.1    Wiatr, W.2
  • 7
    • 0024738288 scopus 로고
    • Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependence
    • Sept.
    • M. W. Pospieszalski, "Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependence," IEEE Trans. Microwave Theory Tech., vol.MTT-37, pp. 1340-1350, Sept. 1989.
    • (1989) IEEE Trans. Microwave Theory Tech. , vol.MTT-37 , pp. 1340-1350
    • Pospieszalski, M.W.1
  • 8
    • 27344456204 scopus 로고    scopus 로고
    • Extremely low-noise amplification with cryogenic FETs and HFETs: 1970-2004
    • Sept.
    • M. W. Pospieszalski, "Extremely low-noise amplification with cryogenic FETs and HFETs: 1970-2004," Microwave Mag., vol.6, no.3, pp. 62-75, Sept. 2005.
    • (2005) Microwave Mag. , vol.6 , Issue.3 , pp. 62-75
    • Pospieszalski, M.W.1
  • 9
  • 10
    • 0003038536 scopus 로고
    • Optimal noise performance of linear amplifiers
    • Apr.
    • H. A. Haus and R. B. Adler, "Optimal noise performance of linear amplifiers," Proc. IRE, vol.46, pp. 1517-1533, Apr. 1976.
    • (1976) Proc. IRE , vol.46 , pp. 1517-1533
    • Haus, H.A.1    Adler, R.B.2
  • 11
    • 0029306263 scopus 로고
    • Influence of the gate leakage current on the noise performance of MESFETs and MODFETs
    • F. Danneville, G. Dambrine, H. Happy, P. Tadyszak, and A. Cappy, "Influence of the gate leakage current on the noise performance of MESFETs and MODFETs," Solid State Electron., vol.38, no.5, pp. 1081-1087, 1995.
    • (1995) Solid State Electron. , vol.38 , Issue.5 , pp. 1081-1087
    • Danneville, F.1    Dambrine, G.2    Happy, H.3    Tadyszak, P.4    Cappy, A.5
  • 12
    • 4444302438 scopus 로고    scopus 로고
    • Influence of the gate leakage current and the gate resistance on the noise and gain performances of 90-nm CMOS for micro- and millimeterwave frequencies
    • Dallas, TX, June
    • H. O. Vickes, M. Ferndahl, A. Masud, and H. Zirtah, "Influence of the gate leakage current and the gate resistance on the noise and gain performances of 90-nm CMOS for micro- and millimeterwave frequencies," in 2004 IEEE MTT-S Int. Microwave Symp. Dig., Dallas, TX, June 2004, pp. 971-974.
    • (2004) 2004 IEEE MTT-S Int. Microwave Symp. Dig. , pp. 971-974
    • Vickes, H.O.1    Ferndahl, M.2    Masud, A.3    Zirtah, H.4
  • 15
    • 0026826270 scopus 로고
    • Improved noise model for MESFETs and HEMTs in lower gigahertz frequency range
    • Mar.
    • P. Heynman and H. Prinzler, "Improved noise model for MESFETs and HEMTs in lower gigahertz frequency range," Electron. Lett., vol.28, no.7, pp. 611-612, Mar. 1992.
    • (1992) Electron. Lett. , vol.28 , Issue.7 , pp. 611-612
    • Heynman, P.1    Prinzler, H.2
  • 16
    • 0027987575 scopus 로고
    • Noise parameter modeling of HEMTs with resistor temperature noise sources
    • San Diego, CA, June
    • T. Felgentreff, G. Olbrich, and P. Russer, "Noise parameter modeling of HEMTs with resistor temperature noise sources," in 1994 IEEE MTT-S Int. Microwave Symp. Dig., San Diego, CA, June 1994, pp. 853-856.
    • (1994) 1994 IEEE MTT-S Int. Microwave Symp. Dig. , pp. 853-856
    • Felgentreff, T.1    Olbrich, G.2    Russer, P.3
  • 21
    • 64749103289 scopus 로고    scopus 로고
    • Scalable small signal and noise modeling for deep submicron MOSFETs
    • Apr.
    • J. Gao and A. Werthof, "Scalable small signal and noise modeling for deep submicron MOSFETs," IEEE Trans. Microwave Theory Tech., vol.MTT-57, pp. 737-744, Apr. 2009.
    • (2009) IEEE Trans. Microwave Theory Tech. , vol.MTT-57 , pp. 737-744
    • Gao, J.1    Werthof, A.2
  • 23
    • 0031236647 scopus 로고    scopus 로고
    • A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design
    • Sept.
    • S. P. Voinigescu, M. C. Maliepaard, J. L. Showell, G. E. Babcock, D. Marchesan, M. Schroter, P. Schvan, and D. L. Harame, "A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design," IEEE J. Solid State Circuits, vol.SSC-32, pp. 1430-1439, Sept. 1997.
    • (1997) IEEE J. Solid State Circuits , vol.SSC-32 , pp. 1430-1439
    • Voinigescu, S.P.1    Maliepaard, M.C.2    Showell, J.L.3    Babcock, G.E.4    Marchesan, D.5    Schroter, M.6    Schvan, P.7    Harame, D.L.8
  • 24
    • 24944498406 scopus 로고    scopus 로고
    • Noise in SiGe HBT RF technology: Physics, modeling and circuit implications
    • Sept.
    • G. Niu, "Noise in SiGe HBT RF technology: Physics, modeling and circuit implications," Proc. IEEE, vol.93, pp. 1583-1597, Sept. 2005.
    • (2005) Proc. IEEE , vol.93 , pp. 1583-1597
    • Niu, G.1
  • 25
    • 24944583056 scopus 로고    scopus 로고
    • Scaling of SiGe heterojunction bipolar transistors
    • Sept.
    • J. S. Rieh, D. Greenberg, A. Stricker, and G. Freeman, "Scaling of SiGe heterojunction bipolar transistors," Proc. IEEE, vol.93, pp. 1522-1538, Sept. 2005.
    • (2005) Proc. IEEE , vol.93 , pp. 1522-1538
    • Rieh, J.S.1    Greenberg, D.2    Stricker, A.3    Freeman, G.4
  • 32
    • 36649028491 scopus 로고    scopus 로고
    • Design of cryogenic SiGe low-noise amplifiers
    • Nov.
    • S. Weinreb, J. C. Bardin, and H. Mani, "Design of cryogenic SiGe low-noise amplifiers," IEEE Trans. Microwave Theory Tech., vol.MTT-55, pp. 2306-2312, Nov. 2007.
    • (2007) IEEE Trans. Microwave Theory Tech. , vol.MTT-55 , pp. 2306-2312
    • Weinreb, S.1    Bardin, J.C.2    Mani, H.3
  • 36
    • 84870019459 scopus 로고    scopus 로고
    • "IT8001data sheet," GIGOPTIX Corp., Palo Alto, CA (part now discontinued)
    • "IT8001data sheet," GIGOPTIX Corp., Palo Alto, CA (part now discontinued).
  • 37
    • 84870039383 scopus 로고    scopus 로고
    • "NE32100 data sheet," NEC, California Eastern Lab., Santa Clara, CA
    • "NE32100 data sheet," NEC, California Eastern Lab., Santa Clara, CA.
  • 38
    • 84870019460 scopus 로고    scopus 로고
    • "FHX13X and FHR45X data sheets," Sumitomo Electric Device Innovations Inc., Yokohama, Japan
    • "FHX13X and FHR45X data sheets," Sumitomo Electric Device Innovations Inc., Yokohama, Japan.
  • 39
    • 84870001674 scopus 로고    scopus 로고
    • "ATF34143 and ATF51543 data sheets," Avago Technologies, San Jose, CA
    • "ATF34143 and ATF51543 data sheets," Avago Technologies, San Jose, CA.
  • 40
    • 84870039384 scopus 로고    scopus 로고
    • "NE3509M04 data sheet," NEC, California Eastern Lab., Santa Clara, CA
    • "NE3509M04 data sheet," NEC, California Eastern Lab., Santa Clara, CA.
  • 41
    • 84870019521 scopus 로고    scopus 로고
    • "VMMK1218 data sheet," Avago Technologies, San Jose, CA
    • "VMMK1218 data sheet," Avago Technologies, San Jose, CA.
  • 42
    • 84870001671 scopus 로고    scopus 로고
    • "MGF4953 data sheet," Mitsubishi Electric, Tokyo, Japan
    • "MGF4953 data sheet," Mitsubishi Electric, Tokyo, Japan.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.