On-wafer S-parameter de-embedding of silicon active and passive devices up to 170 GHz

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2010, Pages 600-603

  Yau, Kenneth H K ^a   Sarkas, Ioannis ^a   Tomkins, Alexander ^a   Chevalier, Pascal ^b   Voinigescu, Sorin P ^a  

^a UNIVERSITY OF TORONTO   (Canada)

^b STMICROELECTRONICS   (France)

Author keywords

De embedding; Millimeter wave; TRL

Indexed keywords

ACTIVE AND PASSIVE DEVICE; DE-EMBEDDING; DE-EMBEDDING METHOD; DE-EMBEDDING TECHNIQUES; MOSFETS; ON-WAFER; S PARAMETERS; SIGE HBTS; TEST STRUCTURE; TRL;

MILLIMETER WAVE DEVICES; MILLIMETER WAVES; SCATTERING PARAMETERS; SILICON WAFERS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77957817037     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2010.5518218     Document Type: Conference Paper

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