Nanoscale CMOS transceiver design in the 90-170-GHz range

IEEE Transactions on Microwave Theory and Techniques

Volumn 57, Issue 12, 2009, Pages 3477-3490

  Laskin, Ekaterina ^a   Khanpour, Mehdi ^a,b   Nicolson, Sean T ^a,c   Tomkins, Alexander ^a   Garcia, Patrice ^d   Cathelin, Andreia ^d   Belot, Didier ^d   Voinigescu, Sorin P ^a  

^a UNIVERSITY OF TORONTO   (Canada)

^b BROADCOM CORPORATION   (United States)

^c MEDIATEK INC   (Taiwan)

^d STMICROELECTRONICS   (France)

Author keywords

CMOS millimeter wave integrated circuits (ICs); Low noise receivers; Millimeter wave Doppler sensor; Millimeter wave imaging; Nanoscale MOSFETs

Indexed keywords

CMOS MILLIMETER WAVE INTEGRATED CIRCUITS; DOPPLER SENSORS; LOW NOISE; MILLIMETER-WAVE IMAGING; NANOSCALE MOSFETS;

ANTENNAS; ELECTRIC NETWORK TOPOLOGY; INTEGRATED CIRCUIT MANUFACTURE; INTEGRATED CIRCUITS; LOW NOISE AMPLIFIERS; MILLIMETER WAVE DEVICES; MILLIMETER WAVES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; MOSFET DEVICES; NANOSTRUCTURED MATERIALS; OSCILLATORS (ELECTRONIC); PHASE NOISE; PRINTED CIRCUIT DESIGN; SENSORS; TRANSCEIVERS;

CMOS INTEGRATED CIRCUITS;

EID: 73049094375     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2009.2034071     Document Type: Article

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