Application of on-wafer calibration techniques for advanced high-speed BiCMOS technology

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2010, Pages 98-101

  Rumiantsev, A ^a,b   Sakalas, P ^b,c   Pourchon, F ^d   Chevalier, P ^d   Derrier, N ^d   Schroter, M ^b,e  

^a Cascade Microtech Dresden GmbH   (Germany)

^b DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^c CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

^d STMICROELECTRONICS   (France)

^e UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

BiCMOS process technology; Calibration; RF circuits; S parameters; Silicon germanium HBT

Indexed keywords

BI-CMOS PROCESS; CUSTOMIZED CALIBRATION; DE-EMBEDDING; HIGH-SPEED BICMOS TECHNOLOGY; IMPEDANCE STANDARDS; ON-WAFER; ON-WAFER CALIBRATION; RF CALIBRATION; RF-CIRCUITS; S -PARAMETERS; SIGE HBTS; SILICON-GERMANIUM HBT;

CALIBRATION; GERMANIUM; HETEROJUNCTION BIPOLAR TRANSISTORS; SCATTERING PARAMETERS; SILICON WAFERS; TECHNOLOGY;

BICMOS TECHNOLOGY;

EID: 78651404640     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/BIPOL.2010.5667929     Document Type: Conference Paper

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