Direct extraction methodology for geometry-scalable RF-CMOS models

IEEE International Conference on Microelectronic Test Structures

Volumn , Issue , 2004, Pages 235-240

  Voinigescu, Sorin P ^a   Tazlauanu, Mihai ^b   Ho, P C ^c   Yang, M T ^c  

^a UNIVERSITY OF TORONTO   (Canada)

^b Quake Technologies Inc   (Canada)

^c TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

FREQUENCIES; MOSFET DEVICES; PARAMETER ESTIMATION; SIGNAL PROCESSING; TRANSCONDUCTANCE; TRANSISTORS;

CUTOFF FREQUENCY; FREQUENCY DEGRADATION; NON-QUASI-STATIC EFFECTS; SINGLE-TRANSISTOR EXTRACTION;

CMOS INTEGRATED CIRCUITS;

EID: 3042660051     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. F.X. Pengg, "Direct parameter extraction on RF-CMOS," RFIC-Symp. Digest, pp.271-274, 2002.
2. Y-S. Lin, S-S. Lu, T-H.Lee and H-B.Liang, "Characterization and modeling of small-signal substrate resistance effect in RF CMOS," RFIC-Symp. Digest, pp.161-164, 2002.