A 140-GHz double-sideband transceiver with amplitude and frequency modulation operating over a few meters

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2009, Pages 178-181

  Laskin, E ^a   Chevalier, P ^b   Sautreuil, B ^b   Voinigescu, S P ^a  

^a UNIVERSITY OF TORONTO   (Canada)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLITUDE AND FREQUENCY MODULATIONS; AMPLITUDE MODULATORS; DATA TRANSMISSION; DOPPLER DETECTION; DOUBLE-SIDEBAND; DOWNCONVERSION; FUNDAMENTAL FREQUENCIES; IF AMPLIFIERS; PUSH-PUSH VCO; SIGE BICMOS TECHNOLOGY; SINGLE-CHIP; VARIABLE GAIN;

FREQUENCY MODULATION; LOW NOISE AMPLIFIERS; SEMICONDUCTING SILICON; TRANSCEIVERS;

BICMOS TECHNOLOGY;

EID: 72449135819     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/BIPOL.2009.5314245     Document Type: Conference Paper

References (4)

1. E. Laskin, et al. "165-GHz Transceiver in SiGe Technology", JSSC, vol. 43, no. 5, pp. 1087-1100, May 2008.
2. G. Avenier, et al., "0.13μm SiGe BiCMOS Technology fully dedicated to mm-Wave Applications", IEEE JSSC in press.
3. M. Steinhauer, et al., "Millimeter-Wave-Radar Sensor Based on a Transceiver Array for Automotive Applications", IEEE MTT, v. 56, no. 2, pp. 261-269, Feb. 2008.
4. M.C. Budge, et al., "Range Correlation Effects in Radars", 1993 IEEE National Radar Conference, pp. 212-216, 1993.