Millimeter-wave and THz circuits in 45-nm SOI CMOS

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2011, Pages

  Inac, Ozgur ^a   Cetinoneri, Berke ^a   Uzunkol, Mehmet ^a   Atesal, Yusuf A ^a   Rebeiz, Gabriel M ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

CMOS; frequency doubler; low noise amplifiers; millimeter wave integrated circuits; mixers; SOI

Indexed keywords

BALANCED DOUBLER; CMOS; CMOS PROCESSS; CONVERSION LOSS; DOUBLE-BALANCED; METAL LAYER; MILLIMETER-WAVE APPLICATIONS; MILLIMETER-WAVE INTEGRATED CIRCUITS; MIXED SIGNAL APPLICATIONS; OUTPUT POWER; PASSIVE MIXERS; SINGLE BALANCED MIXERS; SOI; SOI CMOS; STATE-OF-THE-ART PERFORMANCE;

DIGITAL CIRCUITS; FREQUENCY DOUBLERS; GALLIUM ARSENIDE; GALLIUM NITRIDE; INTEGRATED CIRCUITS; INTEGRATION; LOW NOISE AMPLIFIERS; MILLIMETER WAVES; MIXER CIRCUITS; MIXERS (MACHINERY); SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON ALLOYS; TERAHERTZ WAVES;

CMOS INTEGRATED CIRCUITS;

EID: 81455132383     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2011.6062430     Document Type: Conference Paper

References (5)

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