Characterization of the noise parameters of SiGe HBTs in the 70-170-GHz range

IEEE Transactions on Microwave Theory and Techniques

Volumn 59, Issue 8, 2011, Pages 1983-2000

  Yau, Kenneth H K ^a   Chevalier, Pascal ^b   Chantre, Alain ^b   Voinigescu, Sorin P ^a  

^a UNIVERSITY OF TORONTO   (Canada)

^b STMICROELECTRONICS   (France)

Author keywords

Millimeter wave noise; model parameter extraction; noise correlation; noise modeling; noise parameter measurements; SiGe HBT

Indexed keywords

MILLIMETER-WAVE NOISE; MODEL PARAMETER EXTRACTION; NOISE CORRELATION; NOISE MODELING; NOISE-PARAMETER MEASUREMENTS; SIGE HBTS;

HETEROJUNCTION BIPOLAR TRANSISTORS; LOW NOISE AMPLIFIERS; MOSFET DEVICES; NOISE FIGURE; PARAMETER EXTRACTION; TESTING; TUNERS;

SILICON ALLOYS;

EID: 80051795301     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2011.2153869     Document Type: Article

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