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2
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27844471999
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Opening the terahertz window with integrated diode circuits
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Oct.
-
T.W Crowe, W.L. Bishop, D.W. Porterfield, J.L. Hesler, R.M. Weikle, "Opening the terahertz window with integrated diode circuits," IEEE Journal of Solid State Circuits, Vol. 40, Issue 10, pp. 2104-2110, Oct. 2005.
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(2005)
IEEE Journal of Solid State Circuits
, vol.40
, Issue.10
, pp. 2104-2110
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Crowe, T.W.1
Bishop, W.L.2
Porterfield, D.W.3
Hesler, J.L.4
Weikle, R.M.5
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3
-
-
47349108884
-
Demonstration of a S-MMIC LNA with 16-dB gain at 340-GHz
-
Oct.
-
W.R. Deal, X.B. Mei, V. Radisic, W. Yoshida, P.H. Liu, J. Uyeda, Barsky, T. Gaier, A. Fung, R. Lai, "Demonstration of a S-MMIC LNA with 16-dB gain at 340-GHz," IEEE 2007 CSIC Conf. Dig., pp. 1-4, Oct. 2007.
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(2007)
IEEE 2007 CSIC Conf. Dig.
, pp. 1-4
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Deal, W.R.1
Mei, X.B.2
Radisic, V.3
Yoshida, W.4
Liu, P.H.5
Uyeda, J.6
Gaier, B.T.7
Fung, A.8
Lai, R.9
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4
-
-
70349501258
-
A 300 GHz mHEMT amplifier module
-
May
-
A. Tessmann, A. Leuther, V. Hurm, H. Massler, M. Zink, M. Kuri, M. Riessle, R. Losch, M. Schlechtweg, O. Ambacher, "A 300 GHz mHEMT amplifier module," IEEE 2009 IRPM Conf. Dig., pp. 196-199, May 2009.
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(2009)
IEEE 2009 IRPM Conf. Dig.
, pp. 196-199
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-
Tessmann, A.1
Leuther, A.2
Hurm, V.3
Massler, H.4
Zink, M.5
Kuri, M.6
Riessle, M.7
Losch, R.8
Schlechtweg, M.9
Ambacher, O.10
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5
-
-
36749103786
-
Demonstration of a 311-GHz fundamental oscillator using InP HBT technology
-
Nov.
-
V. Radisic, D. Sawdai, D. Scott, W.R. Deal, L. Dang, D. Li, A. Fung, L. Samoska, T. Gaier, R. Lai, "Demonstration of a 311-GHz fundamental oscillator using InP HBT technology," IEEE MWCL, vol. 55, issue 11, pp. 2329-2335, Nov. 2007.
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(2007)
IEEE MWCL
, vol.55
, Issue.11
, pp. 2329-2335
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Radisic, V.1
Sawdai, D.2
Scott, D.3
Deal, W.R.4
Dang, L.5
Li, D.6
Fung, A.7
Samoska, L.8
Gaier, T.9
Lai, R.10
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6
-
-
41649087635
-
Demonstration of 184 and 255-GHz amplifiers using InP HBT technology
-
April
-
V. Radisic, D. Sawdai, D. Scott, W.R. Deal, L. Dang, D. Li, A. Cavus, A. Andy Fung, L. Samoska, R. To, T. Gaier, R. Lai, "Demonstration of 184 and 255-GHz amplifiers using InP HBT technology," IEEE MWCL, Vol. 18, No. 4, pp. 281-283, April 2008.
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(2008)
IEEE MWCL
, vol.18
, Issue.4
, pp. 281-283
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Radisic, V.1
Sawdai, D.2
Scott, D.3
Deal, W.R.4
Dang, L.5
Li, D.6
Cavus, A.7
Andy Fung, A.8
Samoska, L.9
To, R.10
Gaier, T.11
Lai, R.12
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7
-
-
57349182557
-
250 nm InP DHBT monolithic amplifiers with 4.8 dB gain at 324 GHz
-
June
-
J. Hacker, M. Urteaga, D. Mensa, R. Pierson, M. Jones, Z. Griffith, M. Rodwell, "250 nm InP DHBT monolithic amplifiers with 4.8 dB gain at 324 GHz," IEEE 2008 MTT-S IMS Dig., pp. 403-406, June 2008.
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(2008)
IEEE 2008 MTT-S IMS Dig.
, pp. 403-406
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Hacker, J.1
Urteaga, M.2
Mensa, D.3
Pierson, R.4
Jones, M.5
Griffith, Z.6
Rodwell, M.7
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8
-
-
78650081872
-
Demonstration of a 0.48 THz amplifier module using InP HEMT transistors
-
accepted for publication in
-
W.R. Deal, X.B. Mei, V. Radisic, K. Leong, S. Sarkozy, B. Gorospe, J. Lee, P.H. Liu, W. Yoshida, J. Zhou, M. Lange, J. Uyeda, R. Lai "Demonstration of a 0.48 THz amplifier module using InP HEMT transistors," accepted for publication in IEEE MWCL.
-
IEEE MWCL
-
-
Deal, W.R.1
Mei, X.B.2
Radisic, V.3
Leong, K.4
Sarkozy, S.5
Gorospe, B.6
Lee, J.7
Liu, P.H.8
Yoshida, W.9
Zhou, J.10
Lange, M.11
Uyeda, J.12
Lai, R.13
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9
-
-
67650435804
-
A 340-380 GHz integrated CB-CPW-to-waveguide transition for sub millimeter-wave MMIC Packaging
-
Jun.
-
K. Leong, W.R. Deal, V. Radisic, X.B. Mei, J. Uyeda, L. Samoska, A. Fung, T. Gaier, R. Lai, "A 340-380 GHz integrated CB-CPW-to-waveguide transition for sub millimeter-wave MMIC Packaging," IEEE MWCL, Vol. 19, Issue 6, pp. 413-415, Jun. 2009.
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(2009)
IEEE MWCL
, vol.19
, Issue.6
, pp. 413-415
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Leong, K.1
Deal, W.R.2
Radisic, V.3
Mei, X.B.4
Uyeda, J.5
Samoska, L.6
Fung, A.7
Gaier, T.8
Lai, R.9
-
10
-
-
57849104740
-
A metamorphic 220-320 GHz HEMT amplifier MMIC
-
A. Tessmann, A. Leuther, H. Massler, M. Kuri, R. Loesch, "A metamorphic 220-320 GHz HEMT amplifier MMIC", IEEE Compound Semiconductor Integrated Circuit Symposium, 12-15 Oct. 2008, pp. 31-34.
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IEEE Compound Semiconductor Integrated Circuit Symposium, 12-15 Oct. 2008
, pp. 31-34
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-
Tessmann, A.1
Leuther, A.2
Massler, H.3
Kuri, M.4
Loesch, R.5
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