A 204.8GHz static divide-by-8 frequency divider in 250nm InP HBT

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2010, Pages

  Griffith, Zach ^a   Urteaga, Miguel ^a   Pierson, Richard ^a   Rowell, Petra ^a   Rodwell, Mark ^b   Brar, Bobby ^a  

^a TELEDYNE SCIENTIFIC COMPANY   (United States)

^b University of California   (United States)

Author keywords

250nm InP HBT; Divide by 8; Static frequency divider

Indexed keywords

CLOCK FREQUENCY; CLOCK RATE; DIVIDE-BY-8; FREQUENCY DIVIDERS; GATE DELAYS; INDUCTIVE PEAKING; INP; INP-HBT; LOAD RESISTANCES; METAL LAYER; STATIC FREQUENCY DIVIDERS; THIN-FILM MICROSTRIP; TOTAL POWER DISSIPATION;

INTEGRATED CIRCUITS;

FREQUENCY DIVIDING CIRCUITS;

EID: 78650104679     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2010.5619684     Document Type: Conference Paper

References (7)

1. Z. Griffith, M. Dahlstrom, M. Rodwell, M. Urteaga, R. Pierson, P. Rowell, B. Brar, S. Lee, N. Nguyen, C. Nguyen, "Ultra High Frequency Static Dividers > 150GHz in a Narrow Mesa InGaAs/InP DHBT Technology", Conf. Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting, Montreal, Canada, pp. 176-179, Sept. 13-14, 2004.
2. M. Urteaga, R. Pierson, P. Rowell, M.J. Choe, D. Mensa, B. Brar, "Advanced InP DHBT Process for High Speed LSI Circuits", Conf. Proc. IEEE/LEOS Indium Phosphide and Related Materials, Versailles, France, May 25-29, 2008.
3. τ", Conf. Proc. IEEE/LEOS Indium Phosphide and Related Materials, Matsue, Japan, May 14-18, 2007.
4. S. Trotta, H. Knapp, T. Meister, K. Aufinger, J. Bock, W. Simburger, A. Scholtz, "110-GHz, Static Frequency Divider in SiGe Bipolar Technology", Conf. Proc. IEEE Compound Semiconductor IC Symposium, pp. 291-294, Palm Springs, CA, Oct. 30-Nov. 2, 2005.
5. D. Hitko, T. Hussain, J. Jensen, Y. Royter, S. Morton, D. Matthews, R. Rajavel, I. Milosavljevic, C. Fields, S. Thomas, A. Kurdoghlian, Z. Lao, K. Elliot, M. Sokolich, "A Low Power (45mW/latch) Static Frequency 150GHz CML Divider", Conf. Proc. IEEE Compound Semiconductor IC Symposium, Monterey, CA, Oct. 24-27, 2004
6. N. Weimann, V. Houtsma, Y. Baeyens, J. Weiner, A. Tate, J. Frackoviak, Y.K. Chen, "InP DHBT Circuits for 100Gb/s Ethernet Applications", Conf. Proc. IEEE/LEOS Indium Phosphide and Related Materials, Versailles, France, May 25-29, 2008.
7. M. D'Amore, C. Monier, S. Lin, B. Oyama, D. Scott, E. Kaneshiro, A. Gutierrez-Aitken, A. Oki, "A 0.25μm InP DHBT 200+GHz Static Frequency Divider", Conf. Proc. IEEE Compound Semiconductor IC Symposium, Greensboro, NC, Oct. 11-14, 2009.