Ab initio-based approach to reconstruction, adsorption and incorporation on GaN surfaces

Semiconductor Science and Technology

Volumn 27, Issue 2, 2012, Pages

  Ito, T ^a   Akiyama, T ^a   Nakamura, K ^a  

^a MIE UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADLAYERS; BEAM EQUIVALENT PRESSURE; ELECTRON COUNTING; GAN (0 0 0 1); GROWTH CONDITIONS; HYDROGEN ADSORPTION; MG INCORPORATION; NON-POLAR; NON-POLAR GAN; SEMIPOLAR; STABLE STRUCTURES; SURFACE PHASE;

GALLIUM NITRIDE; HYDROGEN; HYDROGEN BONDS; METALLORGANIC VAPOR PHASE EPITAXY; PHASE DIAGRAMS;

GAS ADSORPTION;

EID: 84856101831     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/27/2/024010     Document Type: Article

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