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Journal of Crystal Growth

Volumn 318, Issue 1, 2011, Pages 72-75

Ab initio-based approach to adsorptiondesorption behavior on the InAs(1 1 1)A heteroepitaxially grown on GaAs substrate

(4) Ito, Tomonori a Ishimure, Naoki a Akiyama, Toru a Nakamura, Kohji a

a MIE UNIVERSITY (Japan)

Author keywords

A1. Adsorption behavior; A1. Computer simulation; A1. Surface structures; A3. Molecular beam epitaxy; B2. InAs(1 1 1)A

Indexed keywords

A1. COMPUTER SIMULATION; A1. SURFACE STRUCTURES; A3. MOLECULAR BEAM EPITAXY; ADSORPTION BEHAVIOR; INAS(1 1 1);

ADATOMS; ADSORPTION; ATOMS; COMPUTATIONAL METHODS; COMPUTER SIMULATION; DIAMOND FILMS; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM ARSENIDE; INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OLIGOMERS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SURFACE ACTIVE AGENTS;

SURFACE STRUCTURE;

EID: 79952737507 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.10.012 Document Type: Conference Paper

Times cited : (10)

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