Theoretical approach to initial growth kinetics of GaN on GaN(0 0 1)

Journal of Crystal Growth

Volumn 300, Issue 1, 2007, Pages 62-65

  Kangawa, Y ^a   Matsuo, Y ^a   Akiyama, T ^b   Ito, T ^b   Shiraishi, K ^c   Kakimoto, K ^a  

^a KYUSHU UNIVERSITY   (Japan)

^b MIE UNIVERSITY   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

A1. Adsorption; A3. Molecular beam epitaxy; B1. c GaN

Indexed keywords

ADSORPTION; DESORPTION; FREE ENERGY; GROWTH KINETICS; MOLECULAR BEAM EPITAXY; SUPERCONDUCTING TRANSITION TEMPERATURE;

ADSORPTION-DESORPTION TRANSITION TEMPERATURE; C-GAN; INITIAL GROWTH KINETICS; TRANSITION BEAM EQUIVALENT PRESSURES;

GALLIUM NITRIDE;

EID: 33847276047     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.203     Document Type: Article

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