Realization of high hole concentrations in Mg doped semipolar (101̄1̄)GaN

Applied Physics Letters

Volumn 89, Issue 20, 2006, Pages

  Kaeding, J F ^a   Asamizu, H ^a   Sato, H ^a   Iza, M ^a   Mates, T E ^a   DenBaars, S P ^a   Speck, J S ^a   Nakamura, S ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; HOLE MOBILITY; POLARIZATION; SEMICONDUCTOR DOPING;

HOLE CONCENTRATION; INTERNAL POLARIZATION FIELDS; POSTGROWTH THERMAL ANNEALING;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 33751103130     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2378486     Document Type: Article

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