Ab initio-based approach to initial growth processes on GaAs (111) B- (2×2) surfaces: Self-surfactant effect of Ga adatoms revisited

Physical Review B - Condensed Matter and Materials Physics

Volumn 77, Issue 23, 2008, Pages

  Tatematsu, Hiroaki ^a   Sano, Kosuke ^a   Akiyama, Toru ^a   Nakamura, Kohji ^a   Ito, Tomonori ^a  

^a MIE UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 45349107501     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.77.233306     Document Type: Article

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