Stability of carbon incorpoated semipolar GaN(11̄01) surface

Japanese Journal of Applied Physics

Volumn 50, Issue 8 PART 1, 2011, Pages

  Akiyama, Toru ^a   Nakamura, Kohji ^a   Ito, Tomonori ^a  

^a MIE UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION ENERGIES; FIRST-PRINCIPLES PSEUDOPOTENTIAL CALCULATION; GROWTH CONDITIONS; METAL-ORGANIC VAPOR PHASE EPITAXY; P-TYPE DOPING; SEMIPOLAR; STRUCTURAL STABILITIES; SURFACE FORMATION ENERGY; VAPOR PHASE;

ADSORPTION; CALCULATIONS; METALLORGANIC VAPOR PHASE EPITAXY; ORGANOMETALLICS; PHASE DIAGRAMS; STABILITY; VAPORS;

GALLIUM NITRIDE;

EID: 80051979067     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.080216     Document Type: Article

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