Ab initio-based approach to structural change of compound semiconductor surfaces during MBE growth

Journal of Crystal Growth

Volumn 311, Issue 3, 2009, Pages 698-701

  Ito, Tomonori ^a   Akiyama, Toru ^a   Nakamura, Kohji ^a  

^a MIE UNIVERSITY   (Japan)

Author keywords

A1. Phase diagrams; A1. Surface structure; A3. Molecular beam epitaxy; B1. Gallium compounds; B1. Nitrides; B1. Semiconducting III V materials

Indexed keywords

ADATOMS; ADSORPTION; ARSENIC; CLARIFICATION; CRYSTAL GROWTH; DESORPTION; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; GRAPHIC METHODS; GROWTH (MATERIALS); MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NITRIDES; PHASE DIAGRAMS; PROBABILITY DENSITY FUNCTION; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WIRES; SULFUR COMPOUNDS; SURFACE ACTIVE AGENTS; SURFACE STRUCTURE; SURFACES;

A1. PHASE DIAGRAMS; A1. SURFACE STRUCTURE; A3. MOLECULAR BEAM EPITAXY; B1. GALLIUM COMPOUNDS; B1. NITRIDES; B1. SEMICONDUCTING III-V MATERIALS;

SEMICONDUCTOR GROWTH;

EID: 59749085937     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.09.088     Document Type: Article

References (37)

1. Ohtake A., Nakamura J., Tsukamoto S., Koguichi N., and Natori A. Phys. Rev. Lett. 89 (2002) 206102
2. Ohtake A., and Koguchi N. Appl. Phys. Lett. 83 (2003) 5193
3. Ohtake A., Kocan P., Nakamura J., Natori A., and Koguichi N. Phys. Rev. Lett. 92 (2004) 236105
4. Hashizume T., Xue Q.K., Ichimiya A., and Sakurai T. Phys. Rev. B 51 (1995) 4200
5. Takahashi M., Yoneda Y., Yamamoto N., and Mizuki J. Phys. Rev. B 68 (2003) 085321
6. Sasaki M., and Yoshida S. J. Vac. Sci. Technol. B 10 (1992) 1720
7. Hiruma K., Morgan G.P., Katsuyama T., Ogawa K., Koguchi M., and Kobayashi H. Appl. Phys. Lett. 59 (1991) 431
8. Ohlsson B.J., Björk M.T., Magnusson M.H., Deppert K., Samuelson L., and Wallenberg L.R. Appl. Phys. Lett. 79 (2001) 3335
9. Motohisa J., Noborisaka J., Takeda J., Inari M., and Fukui T. J. Crystal Growth 272 (2004) 180
10. Noborisaka J., Motohisa J., and Fukui T. Appl. Phys. Lett. 86 (2005) 21302
11. Xue Q.K., Xue Q.Z., Bakhtizin R.Z., Hasegawa Y., Tsong I.S.T., Sakurai T., and Ohno T. Phys. Rev. Lett. 82 (1999) 3074
12. Smith A.R., Feenstra R.M., Greve D.W., Shin M.-S., Skowronski M., Neugebauer J., and Northrup J.E. Surf. Sci. 423 (1999) 70
13. Xie M.H., Zheng L.X., Dai X.Q., Wu H.S., and Tong S.Y. Surf. Sci. 558 (2004) 195
14. Ohno T. Phys. Rev. Lett. 70 (1993) 631
15. Northrup J.E., and Froyen S. Phys. Rev. Lett. 71 (1993) 2276
16. Biegelsen D.K., Bringans R.D., Northrup J.E., and Swartz L.-E. Phys. Rev. Lett. 65 (1990) 452
17. Kley A., Moll N., Pehlke E., and Scheffler M. Phys. Rev. B 54 (1996) 8844
18. Northrup J.E., Neugebauer J., Feenstra R.M., and Smith A.R. Phys. Rev. B 61 (2000) 9932
19. Ishii A. Appl. Surf. Sci. 216 (2003) 447
20. Kangawa Y., Ito T., Taguchi A., Shiraishi K., and Ohachi T. Surf. Sci. 493 (2001) 178
21. Ito T., Ishizaki H., Akiyama T., and Nakamura K. e-J. Surf. Sci. Nanotechnol. 3 (2005) 488
22. Kangawa Y., Matsuo Y., Akiyama T., Ito T., Shiraishi K., and Kakimoto K. J. Crystal Growth 300 (2007) 62
23. Tatematsu H., Sano K., Akiyama T., Nakamura K., and Ito T. Phys. Rev. B 77 (2008) 233306
24. Ito T., Nakamua T., Akiyama T., and Nakamura K. Appl. Surf. Sci. 254 (2008) 7659
25. Kangawa Y., Ito T., Hiraoka Y.S., Taguchi A., Shiraishi K., and Ohachi T. Surf. Sci. 507-510 (2002) 285
26. Kohn W., and Sham L.J. Phys. Rev. 140 (1965) A1133
27. Perdew J.P., Burke K., and Ernzerhof M. Phys. Rev. Lett. 77 (1996) 3365
28. Shiraishi K., Ito T., Suzuki Y.Y., Kageshima H., Kanisawa K., and Yamaguchi H. Surf. Sci. 433-435 (1999) 382
29. Ishizaki H., Akiyama T., Nakamura K., Shiraishi K., Taguchi A., and Ito T. Appl. Surf. Sci. 244 (2004) 186
30. Ohtake A., Ozeki M., Yasuda T., and Hanada T. Phys. Rev. B 65 (2002) 165315
31. Thornton J.M.C., Weightman P., Wolf D.A., and Miller D.L. Phys. Rev. B 51 (1995) 14459
32. Avery A.R., Tok E.S., and Jones T.S. Surf. Sci. 376 (1997) L397
33. Ohtake A., Nakamura J., Komura T., Hanada T., Yao T., Kuramochi H., and Ozeki M. Phys. Rev. B 64 (2001) 45318
34. Shiraishi K., and Ito T. Phys. Rev. B 57 (1998) 6301
35. Taguchi A., Shiraishi K., and Ito T. Appl. Surf. Sci. 162-163 (2000) 354
36. Vezian S., Semond F., Massies J., Bullock D.W., Ding Z., and Thibado P.M. Surf. Sci. 541 (2003) 242
37. Ramachandran V., Lee C.D., Feenstra R.M., Smith A.R., Northrup J.E., and Greve D.W. J. Crystal Growth 209 (2000) 355