Monte Carlo simulation for temperature dependence of Ga diffusion length on GaAs(0 0 1)

Applied Surface Science

Volumn 190, Issue 1-4, 2002, Pages 517-520

  Kangawa, Y ^a   Ito, T ^b   Taguchi, A ^c   Shiraishi, K ^d   Irisawa, T ^a   Ohachi, T ^e  

^a GAKUSHUIN UNIVERSITY   (Japan)

^b MIE UNIVERSITY   (Japan)

^c Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^d UNIVERSITY OF TSUKUBA   (Japan)

^e DOSHISHA UNIVERSITY   (Japan)

Author keywords

Adsorption desorption behavior; Ga diffusion length; Molecular beam epitaxy; Monte Carlo simulation

Indexed keywords

COMPUTATIONAL METHODS; COMPUTER SIMULATION; DESORPTION; MOLECULAR BEAM EPITAXY; MONTE CARLO METHODS; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE STRUCTURE; THERMAL EFFECTS;

SURFACE RECONSTRUCTION;

DIFFUSION IN SOLIDS;

EID: 0037042001     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00930-8     Document Type: Article

References (15)