Mg doping in (1 1̄ 0 1)GaN grown on a 7° off-axis (0 0 1)Si substrate by selective MOVPE

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 207-210

  Hikosaka, Toshiki ^a   Koide, Norikatsu ^a   Honda, Yoshio ^a   Yamaguchi, Masahito ^a   Sawaki, Nobuhiko ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

A1. Doping; A3. Metal organic vapor phase epitaxy; A3. Selective epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

ACTIVATION ENERGY; GALLIUM NITRIDE; MAGNESIUM PRINTING PLATES; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTOR DOPING; SUBSTRATES; SURFACE STRUCTURE;

DOPING LEVELS; OPTICAL SPECTRA; P-TYPE CONDUCTION; SELECTIVE EPITAXY;

SEMICONDUCTOR GROWTH;

EID: 33846424288     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.229     Document Type: Article

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