HVPE growth of semi-polar (1 1 2̄ 2)GaN on GaN template (1 1 3)Si substrate

Journal of Crystal Growth

Volumn 311, Issue 10, 2009, Pages 2875-2878

  Suzuki, N ^a   Uchida, T ^a   Tanikawa, T ^a   Hikosaka, T ^a   Honda, Y ^a   Yamaguchi, M ^a   Sawaki, N ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

A2. Single crystal growth; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

A2. SINGLE CRYSTAL GROWTH; A3. HYDRIDE VAPOR PHASE EPITAXY; B1. NITRIDES; B2. SEMICONDUCTING III-V MATERIALS; GAN TEMPLATE; SI SUBSTRATES; SMOOTH SURFACE; V/III RATIO; VAPOUR-PHASE;

CHEMICAL REACTIONS; CRYSTAL GROWTH; CRYSTALLIZATION; EPITAXIAL GROWTH; GALLIUM NITRIDE; GRAIN BOUNDARIES; GROWTH TEMPERATURE; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON; SINGLE CRYSTALS; SUBSTRATES; VAPOR PHASE EPITAXY; VAPORS;

GALLIUM ALLOYS;

EID: 65749089841     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.01.033     Document Type: Article

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