High-performance doping-free carbon-nanotube-based CMOS devices and integrated circuits

Chinese Science Bulletin

Volumn 57, Issue 2-3, 2012, Pages 135-148

  Zhang, ZhiYong ^a   Wang, Sheng ^a   Peng, LianMao ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

carbon nanotube; complementary metal oxide semiconductor; doping free; field effect transistor; high frequency

Indexed keywords

EID: 84856089142     PISSN: 10016538     EISSN: 18619541     Source Type: Journal    
DOI: 10.1007/s11434-011-4791-6     Document Type: Review

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