Self-aligned U-gate carbon nanotube field-effect transistor with extremely small parasitic capacitance and drain-induced barrier lowering

ACS Nano

Volumn 5, Issue 4, 2011, Pages 2512-2519

  Ding, Li ^a   Wang, Zhenxing ^a   Pei, Tian ^a   Zhang, Zhiyong ^a   Wang, Sheng ^a   Xu, Huilong ^a   Peng, Fei ^b   Li, Yan ^b   Peng, Lian Mao ^a  

^a PEKING UNIVERSITY   (China)

^b PEKING UNIVERSITY   (China)

Author keywords

carbon nanotube; field effect transistor; high speed circuit; parasitic capacitance; self aligned

Indexed keywords

CARBON NANOTUBE FIELD-EFFECT TRANSISTORS; DRAIN-INDUCED BARRIER LOWERING; ELECTROSTATIC POTENTIALS; FREQUENCY DOMAIN MEASUREMENT; GATE STRUCTURE; HIGH FREQUENCY HF; HIGH FREQUENCY RESPONSE; HIGH REPRODUCIBILITY; HIGH-SPEED CIRCUIT; PARASITIC CAPACITANCE; RF APPLICATIONS; SELF-ALIGNED; SELF-ALIGNED DEVICES; SUBTHRESHOLD SWING;

CAPACITANCE; CARBON NANOTUBES; DIELECTRIC MATERIALS; EQUIPMENT; FREQUENCY RESPONSE; MESFET DEVICES;

FIELD EFFECT TRANSISTORS;

EID: 79955371244     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn102091h     Document Type: Article

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