Intrinsic electrical properties of individual single-walled carbon nanotubes with small band gaps

Physical Review Letters

Volumn 84, Issue 24, 2000, Pages 5604-5607

  Zhou, Chongwu ^a   Kong, Jing ^a   Dai, Hongjie ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BAND STRUCTURE; CARBON; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTANCE; ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; FERMI LEVEL; OHMIC CONTACTS; SEMICONDUCTOR DEVICE MANUFACTURE; VOLTAGE CONTROL;

COULOMB BLOCKADE; GATE VOLTAGE; LOCKIN TECHNIQUE; SMALL GAP SEMICONDUCTING SINGLE WALLED CARBON NANOTUBES;

NANOTUBES;

EID: 17044457553     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.84.5604     Document Type: Article

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