GaN membrane metal-semiconductor-metal ultraviolet photodetector

Applied Optics

Volumn 47, Issue 10, 2008, Pages 1453-1456

  Muller A ^a   Konstantinidis, G ^b   Dragoman, M ^a   Neculoiu, D ^a   Kostopoulos, A ^b   Androulidaki, M ^b   Kayambaki, M ^b   Vasilache, D ^a  

^a NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES   (Romania)

^b INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; III-V SEMICONDUCTORS; METALS; PHOTODETECTORS; PHOTONS;

GAN MEMBRANES; METAL SEMICONDUCTOR METAL; MICROMACHINING TECHNIQUES; PHOTODETECTOR STRUCTURE; RESPONSIVITY; ULTRA VIOLET DETECTION; ULTRA-VIOLET PHOTODETECTORS;

WIDE BAND GAP SEMICONDUCTORS;

EID: 48949098163     PISSN: 1559128X     EISSN: 15394522     Source Type: Journal    
DOI: 10.1364/AO.47.001453     Document Type: Article

References (9)

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