Backside-illuminated gan-on-si schottky photodiodes for UV radiation detection

IEEE Electron Device Letters

Volumn 30, Issue 12, 2009, Pages 1308-1310

  Malinowski, Pawel E ^a,d   John, Joachim ^a   Duboz, Jean Yves ^b   Hellings, Geert ^a,d   Lorenz, Anne ^a,d   Rodriguez Madrid, Juan Gabriel ^a   Sturdevant, Charles ^a   Cheng, Kai ^a   Leys, Maarten ^a   Derluyn, Joff ^a   Das, Johan ^a   Germain, Marianne ^a   Minoglou, Kyriaki ^a   De Moor, Piet ^a   Frayssinet, Eric ^b   Semond, Fabrice ^b   Hochedez, Jean François ^c   Giordanengo, Boris ^c   Mertens, Robert ^a,d  

^a IMEC   (Belgium)

^b CRHEA CNRS   (France)

^c ROYAL OBSERVATORY OF BELGIUM   (Belgium)

^d UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

AlGaN; Backside illumination; Extreme ultraviolet (EUV); Schottky photodiode; Ultraviolet imaging

Indexed keywords

ALGAN; BACKSIDE ILLUMINATION; EXTREME ULTRAVIOLETS; SCHOTTKY PHOTODIODES; ULTRAVIOLET IMAGING;

DETECTORS; GALLIUM NITRIDE; OPTOELECTRONIC DEVICES; PHOTODIODES; REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SUBSTRATES; ULTRAVIOLET DEVICES; ULTRAVIOLET RADIATION;

GALLIUM ALLOYS;

EID: 70549098219     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2033722     Document Type: Article

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