Submicron technology for III-nitride semiconductors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 5, 2002, Pages 2071-2074

  Palacios, T ^a   Calle, F ^a   Monroy, E ^a   Munoz E ^a  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC SURFACE WAVE FILTERS; COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY; ELECTRONS; HIGH ELECTRON MOBILITY TRANSISTORS; MONTE CARLO METHODS; MULTILAYERS; NITRIDES; PHOTODETECTORS; PHOTORESISTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

METAL SEMICONDUCTOR METAL PHOTODIODES; METALLIC LAYER; NITRIDE SEMICONDUCTORS; SUBMICRON TECHNOLOGY;

ELECTRON BEAM LITHOGRAPHY;

EID: 0036026379     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1508820     Document Type: Article

References (12)

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9. Monte Carlo simulations have been performed using the TRIM program, an ion implant simulation software by J. F. Ziegler and J. P. Biersack. In the simulations, the "go-and-return" effect was not considered.
10. T. Palacios, E. Monroy, F. Calle, and F. Omnès, Appl. Phys. Lett. 81, 1902 (2002).
11. T. Palacios, F. Calle, E. Monroy, J. Grajal, M. Eichkhoff, O. Ambacher, and C. Prieto, Mater. Sci. Eng., B 93, 154 (2002).
12. F. Calle et al., Proceedings of the 4th International Conference on Materials for Microelectronics and Nanoengineering, Espoo, Finland, June 2002.