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Volumn 36, Issue 4-6, 2004, Pages 807-814

Nitride-based photodetectors: From visible to X-ray monitoring

(10) Pau, J L a Rivera, C a Pereiro, J a Munoz E a Calleja, E a Schuhle U b Frayssinet, E c Beaumont, B c Faurie, J P c Gibart, P c

a Polytechnic University of Madrid (Spain)

b MAX PLANCK INSTITUT FÜR SONNENSYSTEMFORSCHUNG (Germany)

c LUMILOG (France)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; NITRIDES; PHOTOCONDUCTIVITY; PHOTODIODES; PHOTOLITHOGRAPHY; PHOTONS; PLASMA APPLICATIONS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR METAL BOUNDARIES; ULTRAVIOLET RADIATION; VACUUM; X RAY ANALYSIS;

BANDPASS DETECTORS; METAL-SEMICONDUCTOR-METAL (MSM) PHOTODIODES; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY (PAMBE); X-RAY MONITORING;

PHOTODETECTORS;

EID: 9944249529 PISSN: 07496036 EISSN: None Source Type: Journal
DOI: 10.1016/j.spmi.2004.09.037 Document Type: Article

Times cited : (7)

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